Part Details for K4S643233H-HE600 by Samsung Semiconductor
Overview of K4S643233H-HE600 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (8 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for K4S643233H-HE600
K4S643233H-HE600 CAD Models
K4S643233H-HE600 Part Data Attributes
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K4S643233H-HE600
Samsung Semiconductor
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Datasheet
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K4S643233H-HE600
Samsung Semiconductor
Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | BGA | |
| Package Description | LFBGA, | |
| Pin Count | 90 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-PBGA-B90 | |
| JESD-609 Code | e1 | |
| Length | 13 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 32 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 90 | |
| Number of Words | 2097152 words | |
| Number of Words Code | 2000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -25 °C | |
| Organization | 2MX32 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LFBGA | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, LOW PROFILE, FINE PITCH | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.4 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 8 mm |
Alternate Parts for K4S643233H-HE600
This table gives cross-reference parts and alternative options found for K4S643233H-HE600. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S643233H-HE600, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4S643233H-FF600 | Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4S643233H-HE600 vs K4S643233H-FF600 |
| K4S643233H-FG600 | Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4S643233H-HE600 vs K4S643233H-FG600 |
| K4S643233H-HC600 | Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | K4S643233H-HE600 vs K4S643233H-HC600 |
| K4S643233H-HG600 | Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | K4S643233H-HE600 vs K4S643233H-HG600 |
| K4S643233H-FL600 | Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4S643233H-HE600 vs K4S643233H-FL600 |
| K4S643233H-HF600 | Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | K4S643233H-HE600 vs K4S643233H-HF600 |
| K4S643233H-FE600 | Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4S643233H-HE600 vs K4S643233H-FE600 |
| K4S643233H-HN600 | Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | K4S643233H-HE600 vs K4S643233H-HN600 |