Part Details for K4W2G1646C-HC110 by Samsung Semiconductor
Overview of K4W2G1646C-HC110 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for K4W2G1646C-HC110
K4W2G1646C-HC110 CAD Models
K4W2G1646C-HC110 Part Data Attributes
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K4W2G1646C-HC110
Samsung Semiconductor
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Datasheet
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K4W2G1646C-HC110
Samsung Semiconductor
DDR DRAM, 128MX16, 0.195ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | BGA | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | |
Pin Count | 96 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.36 | |
Access Mode | MULTI BANK PAGE BURST | |
Access Time-Max | 0.195 ns | |
Additional Feature | AUTO/SELF REFRESH | |
JESD-30 Code | R-PBGA-B96 | |
Length | 13.3 mm | |
Memory Density | 2147483648 bit | |
Memory IC Type | DDR DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 96 | |
Number of Words | 134217728 words | |
Number of Words Code | 128000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 95 °C | |
Operating Temperature-Min | ||
Organization | 128MX16 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TFBGA | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
Qualification Status | Not Qualified | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Supply Voltage-Max (Vsup) | 1.575 V | |
Supply Voltage-Min (Vsup) | 1.425 V | |
Supply Voltage-Nom (Vsup) | 1.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | OTHER | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Width | 7.5 mm |
Alternate Parts for K4W2G1646C-HC110
This table gives cross-reference parts and alternative options found for K4W2G1646C-HC110. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4W2G1646C-HC110, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MT41J128M16HA-125AAT:D | DDR DRAM, 128MX16, CMOS, PBGA96, 9 X 14 MM, LEAD FREE, FBGA-96 | Micron Technology Inc | K4W2G1646C-HC110 vs MT41J128M16HA-125AAT:D |
MT41K128M16JT-15EM:K | DDR DRAM, 128MX16, CMOS, PBGA96, 8 X 14 MM, LEAD FREE, FBGA-96 | Micron Technology Inc | K4W2G1646C-HC110 vs MT41K128M16JT-15EM:K |
H5TQ2G63FFR-RDC | DDR DRAM, 128MX16, 0.195ns, CMOS, PBGA96, FBGA-96 | SK Hynix Inc | K4W2G1646C-HC110 vs H5TQ2G63FFR-RDC |
MT41K128M16HA-125IT:D | DDR DRAM, 128MX16, CMOS, PBGA96, FBGA-96 | Micron Technology Inc | K4W2G1646C-HC110 vs MT41K128M16HA-125IT:D |
MT41K128M16HA-25:D | DDR DRAM, 128MX16, CMOS, PBGA96, 9 X 14 MM, LEAD FREE, FBGA-96 | Micron Technology Inc | K4W2G1646C-HC110 vs MT41K128M16HA-25:D |
H5TQ2G63FFR-RDI | DDR DRAM, 128MX16, 0.195ns, CMOS, PBGA96, FBGA-96 | SK Hynix Inc | K4W2G1646C-HC110 vs H5TQ2G63FFR-RDI |
MT41J128M16HA-187:D | DDR DRAM, 128MX16, CMOS, PBGA96, 9 X 14 MM, LEAD FREE, FBGA-96 | Micron Technology Inc | K4W2G1646C-HC110 vs MT41J128M16HA-187:D |
MT41K128M16JT-187EM:K | DDR DRAM, 128MX16, CMOS, PBGA96, 8 X 14 MM, LEAD FREE, FBGA-96 | Micron Technology Inc | K4W2G1646C-HC110 vs MT41K128M16JT-187EM:K |
NT5CC128M16BP-DI | DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, WBGA-96 | Nanya Technology Corporation | K4W2G1646C-HC110 vs NT5CC128M16BP-DI |
MT41K128M16HA-187EIT:D | DDR DRAM, 128MX16, CMOS, PBGA96, FBGA-96 | Micron Technology Inc | K4W2G1646C-HC110 vs MT41K128M16HA-187EIT:D |