Part Details for KM416S1120DT-F7 by Samsung Semiconductor
Overview of KM416S1120DT-F7 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for KM416S1120DT-F7
KM416S1120DT-F7 CAD Models
KM416S1120DT-F7 Part Data Attributes
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KM416S1120DT-F7
Samsung Semiconductor
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Datasheet
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KM416S1120DT-F7
Samsung Semiconductor
Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | TSOP2 | |
Package Description | TSOP2, TSOP50,.46,32 | |
Pin Count | 50 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | DUAL BANK PAGE BURST | |
Access Time-Max | 5.5 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 143 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | R-PDSO-G50 | |
JESD-609 Code | e0 | |
Length | 20.95 mm | |
Memory Density | 16777216 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 50 | |
Number of Words | 1048576 words | |
Number of Words Code | 1000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 1MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSOP50,.46,32 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 2048 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.002 A | |
Supply Current-Max | 0.14 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for KM416S1120DT-F7
This table gives cross-reference parts and alternative options found for KM416S1120DT-F7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of KM416S1120DT-F7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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VG3617161ET-8 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Vanguard International Semiconductor Corporation | KM416S1120DT-F7 vs VG3617161ET-8 |
M52D16161A-10TIG | Synchronous DRAM, 1MX16, 9ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 | Elite Semiconductor Memory Technology Inc | KM416S1120DT-F7 vs M52D16161A-10TIG |
IS42S16100B-6T | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 | Integrated Silicon Solution Inc | KM416S1120DT-F7 vs IS42S16100B-6T |
MSM56V16160DH-15TS-K | Synchronous DRAM, 1MX16, 9ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 | OKI Electric Industry Co Ltd | KM416S1120DT-F7 vs MSM56V16160DH-15TS-K |
IC42S16100E-7TL | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-50 | Integrated Silicon Solution Inc | KM416S1120DT-F7 vs IC42S16100E-7TL |
HY57V161610ETP-55I | Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 | SK Hynix Inc | KM416S1120DT-F7 vs HY57V161610ETP-55I |
UPD4218160LG5-A70-7JF | Fast Page DRAM, 1MX16, 70ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | NEC Electronics Group | KM416S1120DT-F7 vs UPD4218160LG5-A70-7JF |
TC59S1616AFT-12 | IC 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50, Dynamic RAM | Toshiba America Electronic Components | KM416S1120DT-F7 vs TC59S1616AFT-12 |
IS42S16100E-5TL | Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, TSOP2-50 | Integrated Silicon Solution Inc | KM416S1120DT-F7 vs IS42S16100E-5TL |
UPD4516161G5-A12 | Synchronous DRAM, 1MX16, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Elpida Memory Inc | KM416S1120DT-F7 vs UPD4516161G5-A12 |