Datasheets
M12L128168A-6TG by: Elite Semiconductor Memory Technology Inc

Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54

Part Details for M12L128168A-6TG by Elite Semiconductor Memory Technology Inc

Overview of M12L128168A-6TG by Elite Semiconductor Memory Technology Inc

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage

Part Details for M12L128168A-6TG

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M12L128168A-6TG Part Data Attributes:

M12L128168A-6TG Elite Semiconductor Memory Technology Inc
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M12L128168A-6TG Elite Semiconductor Memory Technology Inc Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
Rohs Code Yes
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
Part Package Code TSOP2
Package Description TSOP2, TSOP54,.46,32
Pin Count 54
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G54
Length 22.22 mm
Memory Density 134217728 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 8MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP54,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.16 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for M12L128168A-6TG

This table gives cross-reference parts and alternative options found for M12L128168A-6TG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M12L128168A-6TG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HY57V281620FTP-6 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 SK Hynix Inc M12L128168A-6TG vs HY57V281620FTP-6
EDS1216AHTA-6B-E Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, ROHS COMPLIANT, PLASTIC, TSOP2-54 Elpida Memory Inc M12L128168A-6TG vs EDS1216AHTA-6B-E
HY57V281620ET-6 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc M12L128168A-6TG vs HY57V281620ET-6
Part Number Description Manufacturer Compare
IS42S16800E-5TL Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 Integrated Silicon Solution Inc M12L128168A-6TG vs IS42S16800E-5TL
HYB39S128160CT-7.5 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54 Infineon Technologies AG M12L128168A-6TG vs HYB39S128160CT-7.5
K4S280432A-TL80 Synchronous DRAM, 32MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor M12L128168A-6TG vs K4S280432A-TL80
HYB39S128160DE-7 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 Infineon Technologies AG M12L128168A-6TG vs HYB39S128160DE-7
HY57Y281620HCLT-P Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc M12L128168A-6TG vs HY57Y281620HCLT-P
TC59SM704AFT-80 IC 32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM Toshiba America Electronic Components M12L128168A-6TG vs TC59SM704AFT-80
IS42S16800B-75ETLI Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 Integrated Silicon Solution Inc M12L128168A-6TG vs IS42S16800B-75ETLI
IS42S16800E-7TL Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 Integrated Silicon Solution Inc M12L128168A-6TG vs IS42S16800E-7TL
K4S281632F-UC600 Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, LEAD FREE, TSOP2-54 Samsung Semiconductor M12L128168A-6TG vs K4S281632F-UC600
NT5SV8M16FS-6K Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 MM, HALOGEN FREE AND LEAD FREE, PLASTIC, TSSOP2-54 Nanya Technology Corporation M12L128168A-6TG vs NT5SV8M16FS-6K

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