Datasheets
M12L128168A-7TG2S by: Elite Semiconductor Memory Technology Inc

DRAM,

Part Details for M12L128168A-7TG2S by Elite Semiconductor Memory Technology Inc

Overview of M12L128168A-7TG2S by Elite Semiconductor Memory Technology Inc

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage

Part Details for M12L128168A-7TG2S

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M12L128168A-7TG2S Part Data Attributes

M12L128168A-7TG2S Elite Semiconductor Memory Technology Inc
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M12L128168A-7TG2S Elite Semiconductor Memory Technology Inc DRAM,
Part Life Cycle Code Active
Ihs Manufacturer ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Date Of Intro 2017-08-18
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 143 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G54
Length 22.22 mm
Memory Density 134217728 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 8MX16
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP54,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.19 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for M12L128168A-7TG2S

This table gives cross-reference parts and alternative options found for M12L128168A-7TG2S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M12L128168A-7TG2S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AS4C4M16SA-6TAN Synchronous DRAM, Alliance Memory Inc M12L128168A-7TG2S vs AS4C4M16SA-6TAN
M2V64S40DTP-6 Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 Mitsubishi Electric M12L128168A-7TG2S vs M2V64S40DTP-6
TC59S6416CFTL-75 IC 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM Toshiba America Electronic Components M12L128168A-7TG2S vs TC59S6416CFTL-75
MT48LC4M16A2-75 4MX16 SYNCHRONOUS DRAM, 5.4ns, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 Micron Technology Inc M12L128168A-7TG2S vs MT48LC4M16A2-75
NT56V6620C0T-75 Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, SSOP2-54 Nanya Technology Corporation M12L128168A-7TG2S vs NT56V6620C0T-75
AS4C4M16SA-6TCN Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, TSOP2-54 Alliance Memory Inc M12L128168A-7TG2S vs AS4C4M16SA-6TCN
W986416BH-7 Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 Winbond Electronics Corp M12L128168A-7TG2S vs W986416BH-7
HM5264165FTT-75 Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Elpida Memory Inc M12L128168A-7TG2S vs HM5264165FTT-75
V54C365164VDT6 Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, PLASTIC, TSOP2-54 Mosel Vitelic Corporation M12L128168A-7TG2S vs V54C365164VDT6
IS45S16400F-7CTLA2 Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, ROHS COMPLIANT, TSOP2-54 Integrated Silicon Solution Inc M12L128168A-7TG2S vs IS45S16400F-7CTLA2
Part Number Description Manufacturer Compare
AS4C4M16S-6TE Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 Alliance Memory Inc M12L128168A-7TG2S vs AS4C4M16S-6TE
V54C365164VDT7L Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Mosel Vitelic Corporation M12L128168A-7TG2S vs V54C365164VDT7L
AS4C4M16S-6BIN Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1.20 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-54 Alliance Memory Inc M12L128168A-7TG2S vs AS4C4M16S-6BIN
IC42S16400F-7TL-TR Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 Integrated Silicon Solution Inc M12L128168A-7TG2S vs IC42S16400F-7TL-TR
K4S641632K-TC600 Synchronous DRAM, 4MX4, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor M12L128168A-7TG2S vs K4S641632K-TC600
K4S641632K-UP600 Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INTCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 Samsung Semiconductor M12L128168A-7TG2S vs K4S641632K-UP600
MD56V62162J-7TA Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 LAPIS Semiconductor Co Ltd M12L128168A-7TG2S vs MD56V62162J-7TA
V54C365164VBT75L Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Mosel Vitelic Corporation M12L128168A-7TG2S vs V54C365164VBT75L
MT48LC4M16A2TG-75:G Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micron Technology Inc M12L128168A-7TG2S vs MT48LC4M16A2TG-75:G
MT48LC4M16A2TG-7EL:G Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micron Technology Inc M12L128168A-7TG2S vs MT48LC4M16A2TG-7EL:G

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