Datasheets
M12L2561616A-6BVG2A by: Elite Semiconductor Memory Technology Inc

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-54

Part Details for M12L2561616A-6BVG2A by Elite Semiconductor Memory Technology Inc

Overview of M12L2561616A-6BVG2A by Elite Semiconductor Memory Technology Inc

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage

Part Details for M12L2561616A-6BVG2A

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M12L2561616A-6BVG2A Part Data Attributes

M12L2561616A-6BVG2A Elite Semiconductor Memory Technology Inc
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M12L2561616A-6BVG2A Elite Semiconductor Memory Technology Inc Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-54
Part Life Cycle Code Active
Ihs Manufacturer ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
Package Description VFBGA,
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.24
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code S-PBGA-B54
Length 8 mm
Memory Density 268435456 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 16MX16
Package Body Material PLASTIC/EPOXY
Package Code VFBGA
Package Shape SQUARE
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Seated Height-Max 1 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for M12L2561616A-6BVG2A

This table gives cross-reference parts and alternative options found for M12L2561616A-6BVG2A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M12L2561616A-6BVG2A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
M12L2561616A-6BVAG2A Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-54 Elite Semiconductor Memory Technology Inc M12L2561616A-6BVG2A vs M12L2561616A-6BVAG2A
M12L2561616A-6BIG2K Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-54 Elite Semiconductor Memory Technology Inc M12L2561616A-6BVG2A vs M12L2561616A-6BIG2K
IS45SM16160K-6BLA1 Synchronous DRAM, 16MX16, 5.5ns, CMOS, PBGA54, FBGA-54 Integrated Silicon Solution Inc M12L2561616A-6BVG2A vs IS45SM16160K-6BLA1
M12L2561616A-6BIG2A Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-54 Elite Semiconductor Memory Technology Inc M12L2561616A-6BVG2A vs M12L2561616A-6BIG2A
M12L2561616A-6BG2K Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-54 Elite Semiconductor Memory Technology Inc M12L2561616A-6BVG2A vs M12L2561616A-6BG2K
IS45SM16160K-6BLA2 Synchronous DRAM, 16MX16, 5.5ns, CMOS, PBGA54, FBGA-54 Integrated Silicon Solution Inc M12L2561616A-6BVG2A vs IS45SM16160K-6BLA2
Part Number Description Manufacturer Compare
SCB33S256160AE-6EBI Synchronous DRAM, Xi'an UniIC Semiconductors Co Ltd M12L2561616A-6BVG2A vs SCB33S256160AE-6EBI
EM48AM1684VTF-75FE Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, TSOPII-54 Eorex Corporation M12L2561616A-6BVG2A vs EM48AM1684VTF-75FE
SCB33S256160AE-6EB Synchronous DRAM, Xi'an UniIC Semiconductors Co Ltd M12L2561616A-6BVG2A vs SCB33S256160AE-6EB
M12L2561616A-7BIG2K Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-54 Elite Semiconductor Memory Technology Inc M12L2561616A-6BVG2A vs M12L2561616A-7BIG2K
MD56V82160A-75TA Synchronous DRAM, LAPIS Semiconductor Co Ltd M12L2561616A-6BVG2A vs MD56V82160A-75TA
SCX33S256160AF-6BX Synchronous DRAM, Xi'an UniIC Semiconductors Co Ltd M12L2561616A-6BVG2A vs SCX33S256160AF-6BX
AS4C16M16S-7BCN Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-54 Alliance Memory Inc M12L2561616A-6BVG2A vs AS4C16M16S-7BCN
SCB33S256160AE-6BI Synchronous DRAM, Xi'an UniIC Semiconductors Co Ltd M12L2561616A-6BVG2A vs SCB33S256160AE-6BI
SCB33S256160AE-6BX Synchronous DRAM, Xi'an UniIC Semiconductors Co Ltd M12L2561616A-6BVG2A vs SCB33S256160AE-6BX
M12L2561616A-6BG2K Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-54 Elite Semiconductor Memory Technology Inc M12L2561616A-6BVG2A vs M12L2561616A-6BG2K

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