Part Details for M12L2561616A-6BVG2A by Elite Semiconductor Memory Technology Inc
Overview of M12L2561616A-6BVG2A by Elite Semiconductor Memory Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for M12L2561616A-6BVG2A
M12L2561616A-6BVG2A CAD Models
M12L2561616A-6BVG2A Part Data Attributes
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M12L2561616A-6BVG2A
Elite Semiconductor Memory Technology Inc
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Datasheet
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M12L2561616A-6BVG2A
Elite Semiconductor Memory Technology Inc
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-54
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Part Life Cycle Code | Active | |
Ihs Manufacturer | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | |
Package Description | VFBGA, | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.24 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 5.4 ns | |
Additional Feature | AUTO/SELF REFRESH | |
JESD-30 Code | S-PBGA-B54 | |
Length | 8 mm | |
Memory Density | 268435456 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 54 | |
Number of Words | 16777216 words | |
Number of Words Code | 16000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 16MX16 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | VFBGA | |
Package Shape | SQUARE | |
Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | |
Seated Height-Max | 1 mm | |
Self Refresh | YES | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Width | 8 mm |
Alternate Parts for M12L2561616A-6BVG2A
This table gives cross-reference parts and alternative options found for M12L2561616A-6BVG2A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M12L2561616A-6BVG2A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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M12L2561616A-6BVAG2A | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-54 | Elite Semiconductor Memory Technology Inc | M12L2561616A-6BVG2A vs M12L2561616A-6BVAG2A |
M12L2561616A-6BIG2K | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-54 | Elite Semiconductor Memory Technology Inc | M12L2561616A-6BVG2A vs M12L2561616A-6BIG2K |
IS45SM16160K-6BLA1 | Synchronous DRAM, 16MX16, 5.5ns, CMOS, PBGA54, FBGA-54 | Integrated Silicon Solution Inc | M12L2561616A-6BVG2A vs IS45SM16160K-6BLA1 |
M12L2561616A-6BIG2A | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-54 | Elite Semiconductor Memory Technology Inc | M12L2561616A-6BVG2A vs M12L2561616A-6BIG2A |
M12L2561616A-6BG2K | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-54 | Elite Semiconductor Memory Technology Inc | M12L2561616A-6BVG2A vs M12L2561616A-6BG2K |
IS45SM16160K-6BLA2 | Synchronous DRAM, 16MX16, 5.5ns, CMOS, PBGA54, FBGA-54 | Integrated Silicon Solution Inc | M12L2561616A-6BVG2A vs IS45SM16160K-6BLA2 |