Memory
M12L64322A-6BG
Elite Semiconductor Memory Technology Inc
Description: Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, BGA-90

Overview of M12L64322A-6BG by Elite Semiconductor Memory Technology Inc

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Where used in Applications: Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

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Part Data Attributes for M12L64322A-6BG by Elite Semiconductor Memory Technology Inc

M12L64322A-6BG
Elite Semiconductor Memory Technology Inc
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
Part Package Code
BGA
Package Description
VFBGA,
Pin Count
90
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
5.5 ns
Additional Feature
AUTO/SELF REFRESH
JESD-30 Code
R-PBGA-B90
Length
13 mm
Memory Density
67108864 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
32
Number of Functions
1
Number of Ports
1
Number of Terminals
90
Number of Words
2097152 words
Number of Words Code
2000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
2MX32
Package Body Material
PLASTIC/EPOXY
Package Code
VFBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Qualification Status
Not Qualified
Seated Height-Max
1 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Width
8 mm
Want to compare parts?
  1. M12L64322A-6BG
    Elite Semiconductor Memory Technology Inc
    Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, BGA-90
    VS

Alternate Parts for M12L64322A-6BG

This table gives cross-reference parts and alternative options found for M12L64322A-6BG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M12L64322A-6BG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IS45S32200E-75EBLA1 2MX32 SYNCHRONOUS DRAM, 5.5ns, PBGA90, 13 X 8 MM, LEAD FREE, 0.80 MM PITCH, TFBGA-90 ABLIC Inc. M12L64322A-6BG vs IS45S32200E-75EBLA1
IS42S32200E-6BLI 2MX32 SYNCHRONOUS DRAM, 5.5ns, PBGA90, 13 X 8 MM, LEAD FREE, 0.80 MM PITCH, TFBGA-90 ABLIC Inc. M12L64322A-6BG vs IS42S32200E-6BLI
IS42S32200-7BLI Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MO-207, BGA-90 Integrated Silicon Solution Inc M12L64322A-6BG vs IS42S32200-7BLI
IS42S32200E-6B 2MX32 SYNCHRONOUS DRAM, 5.5ns, PBGA90, 13 X 8 MM, 0.80 MM PITCH, TFBGA-90 ABLIC Inc. M12L64322A-6BG vs IS42S32200E-6B
IS45S32200E-75EBLA1 Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc M12L64322A-6BG vs IS45S32200E-75EBLA1
IS42S32200E-7B 2MX32 SYNCHRONOUS DRAM, 5.5ns, PBGA90, 13 X 8 MM, 0.80 MM PITCH, TFBGA-90 ABLIC Inc. M12L64322A-6BG vs IS42S32200E-7B
HY5V62DF-6 Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-90 SK Hynix Inc M12L64322A-6BG vs HY5V62DF-6
HY5V62DFP-7 Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-90 SK Hynix Inc M12L64322A-6BG vs HY5V62DFP-7
IS42S32200E-6BI 2MX32 SYNCHRONOUS DRAM, 5.5ns, PBGA90, 13 X 8 MM, 0.80 MM PITCH, TFBGA-90 ABLIC Inc. M12L64322A-6BG vs IS42S32200E-6BI
MT48LC2M32B2B5-6:GIT Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, VFBGA-90 Micron Technology Inc M12L64322A-6BG vs MT48LC2M32B2B5-6:GIT
Part Number Description Manufacturer Compare
IS42SM32200K-6BLI Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc M12L64322A-6BG vs IS42SM32200K-6BLI
IS42S32200E-6BL Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc M12L64322A-6BG vs IS42S32200E-6BL
K4S643233H-FG1H0 Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor M12L64322A-6BG vs K4S643233H-FG1H0
HY5V62DF-55 Synchronous DRAM, 2MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-90 SK Hynix Inc M12L64322A-6BG vs HY5V62DF-55
IS42S32200E-6BLI 2MX32 SYNCHRONOUS DRAM, 5.5ns, PBGA90, 13 X 8 MM, LEAD FREE, 0.80 MM PITCH, TFBGA-90 ABLIC Inc. M12L64322A-6BG vs IS42S32200E-6BLI
K4S643233H-FN600 Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor M12L64322A-6BG vs K4S643233H-FN600
HY5V62CF-S Synchronous DRAM, 2GX32, 6ns, CMOS, PBGA90, 11 X 13 MM, 0.80 MM PITCH, FBGA-90 SK Hynix Inc M12L64322A-6BG vs HY5V62CF-S
K4S64323LH-FE1H0 Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor M12L64322A-6BG vs K4S64323LH-FE1H0
MT48LC2M32B2B5-55AT:G Synchronous DRAM, 2MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, VFBGA-90 Micron Technology Inc M12L64322A-6BG vs MT48LC2M32B2B5-55AT:G
K4S643233H-HE750 Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor M12L64322A-6BG vs K4S643233H-HE750

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