Part Details for M312L3310ETS-LB3 by Samsung Semiconductor
Overview of M312L3310ETS-LB3 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for M312L3310ETS-LB3
M312L3310ETS-LB3 CAD Models
M312L3310ETS-LB3 Part Data Attributes:
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M312L3310ETS-LB3
Samsung Semiconductor
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Datasheet
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M312L3310ETS-LB3
Samsung Semiconductor
DDR DRAM Module, 32MX72, 0.7ns, CMOS, DIMM-184
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | DIMM | |
Package Description | DIMM, | |
Pin Count | 184 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.36 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 0.7 ns | |
Additional Feature | AUTO/SELF REFRESH | |
JESD-30 Code | R-XDMA-N184 | |
JESD-609 Code | e0 | |
Memory Density | 2415919104 bit | |
Memory IC Type | DDR DRAM MODULE | |
Memory Width | 72 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 184 | |
Number of Words | 33554432 words | |
Number of Words Code | 32000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 32MX72 | |
Package Body Material | UNSPECIFIED | |
Package Code | DIMM | |
Package Shape | RECTANGULAR | |
Package Style | MICROELECTRONIC ASSEMBLY | |
Qualification Status | Not Qualified | |
Self Refresh | YES | |
Supply Voltage-Max (Vsup) | 2.7 V | |
Supply Voltage-Min (Vsup) | 2.3 V | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | NO | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL |
Alternate Parts for M312L3310ETS-LB3
This table gives cross-reference parts and alternative options found for M312L3310ETS-LB3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M312L3310ETS-LB3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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WED3EG7218S262JD3 | DDR DRAM Module, 16MX72, 0.75ns, CMOS, DIMM-184 | Microsemi Corporation | M312L3310ETS-LB3 vs WED3EG7218S262JD3 |
M381L1713CT1-CA2 | DDR DRAM Module, 16MX72, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | M312L3310ETS-LB3 vs M381L1713CT1-CA2 |
V827432U24SAIG-C0 | DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 | ProMOS Technologies Inc | M312L3310ETS-LB3 vs V827432U24SAIG-C0 |
WED3EG7218S202D3 | DDR DRAM Module, 16MX72, 0.75ns, CMOS, DIMM-184 | Microsemi Corporation | M312L3310ETS-LB3 vs WED3EG7218S202D3 |
M381L3223BT0-CA2 | Synchronous DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | M312L3310ETS-LB3 vs M381L3223BT0-CA2 |
MT5VDDT1672AY-40BA1 | DDR DRAM Module, 16MX72, 0.7ns, CMOS, DIMM-184 | Micron Technology Inc | M312L3310ETS-LB3 vs MT5VDDT1672AY-40BA1 |
WED3EG72M32S403JD3MG | DDR DRAM Module, 32MX72, 0.7ns, CMOS, ROHS COMPLIANT, DIMM-184 | Microsemi Corporation | M312L3310ETS-LB3 vs WED3EG72M32S403JD3MG |
M381L1713DTL-CB0 | DDR DRAM Module, 16MX72, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | M312L3310ETS-LB3 vs M381L1713DTL-CB0 |
V827432U24SATL-D4 | DDR DRAM Module, 32MX72, 0.55ns, CMOS, DIMM-184 | ProMOS Technologies Inc | M312L3310ETS-LB3 vs V827432U24SATL-D4 |
MC-45D32DA721KFA-C75 | DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 | Elpida Memory Inc | M312L3310ETS-LB3 vs MC-45D32DA721KFA-C75 |