Datasheets
M312L3310ETS-LB3 by: Samsung Semiconductor

DDR DRAM Module, 32MX72, 0.7ns, CMOS, DIMM-184

Part Details for M312L3310ETS-LB3 by Samsung Semiconductor

Overview of M312L3310ETS-LB3 by Samsung Semiconductor

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Part Details for M312L3310ETS-LB3

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M312L3310ETS-LB3 Part Data Attributes:

M312L3310ETS-LB3 Samsung Semiconductor
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M312L3310ETS-LB3 Samsung Semiconductor DDR DRAM Module, 32MX72, 0.7ns, CMOS, DIMM-184
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code DIMM
Package Description DIMM,
Pin Count 184
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.36
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.7 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-XDMA-N184
JESD-609 Code e0
Memory Density 2415919104 bit
Memory IC Type DDR DRAM MODULE
Memory Width 72
Number of Functions 1
Number of Ports 1
Number of Terminals 184
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 32MX72
Package Body Material UNSPECIFIED
Package Code DIMM
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified
Self Refresh YES
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount NO
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form NO LEAD
Terminal Position DUAL

Alternate Parts for M312L3310ETS-LB3

This table gives cross-reference parts and alternative options found for M312L3310ETS-LB3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M312L3310ETS-LB3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
WED3EG7218S262JD3 DDR DRAM Module, 16MX72, 0.75ns, CMOS, DIMM-184 Microsemi Corporation M312L3310ETS-LB3 vs WED3EG7218S262JD3
M381L1713CT1-CA2 DDR DRAM Module, 16MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M312L3310ETS-LB3 vs M381L1713CT1-CA2
V827432U24SAIG-C0 DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 ProMOS Technologies Inc M312L3310ETS-LB3 vs V827432U24SAIG-C0
WED3EG7218S202D3 DDR DRAM Module, 16MX72, 0.75ns, CMOS, DIMM-184 Microsemi Corporation M312L3310ETS-LB3 vs WED3EG7218S202D3
M381L3223BT0-CA2 Synchronous DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M312L3310ETS-LB3 vs M381L3223BT0-CA2
MT5VDDT1672AY-40BA1 DDR DRAM Module, 16MX72, 0.7ns, CMOS, DIMM-184 Micron Technology Inc M312L3310ETS-LB3 vs MT5VDDT1672AY-40BA1
WED3EG72M32S403JD3MG DDR DRAM Module, 32MX72, 0.7ns, CMOS, ROHS COMPLIANT, DIMM-184 Microsemi Corporation M312L3310ETS-LB3 vs WED3EG72M32S403JD3MG
M381L1713DTL-CB0 DDR DRAM Module, 16MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M312L3310ETS-LB3 vs M381L1713DTL-CB0
V827432U24SATL-D4 DDR DRAM Module, 32MX72, 0.55ns, CMOS, DIMM-184 ProMOS Technologies Inc M312L3310ETS-LB3 vs V827432U24SATL-D4
MC-45D32DA721KFA-C75 DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 Elpida Memory Inc M312L3310ETS-LB3 vs MC-45D32DA721KFA-C75

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