Part Details for MB81F64842B-103LFN by FUJITSU Limited
Overview of MB81F64842B-103LFN by FUJITSU Limited
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for MB81F64842B-103LFN
MB81F64842B-103LFN CAD Models
MB81F64842B-103LFN Part Data Attributes
|
|
MB81F64842B-103LFN
FUJITSU Limited
Buy Now
Datasheet
|
Compare Parts:
MB81F64842B-103LFN
FUJITSU Limited
Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54
|
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FUJITSU LTD | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSOP54,.46,32 | |
| Pin Count | 54 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 100 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e0 | |
| Length | 22.22 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 8MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.0005 A | |
| Supply Current-Max | 0.22 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for MB81F64842B-103LFN
This table gives cross-reference parts and alternative options found for MB81F64842B-103LFN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MB81F64842B-103LFN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IBM0364804CT3C-360 | Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | IBM | MB81F64842B-103LFN vs IBM0364804CT3C-360 |
| MB81F64842B-10LFN | Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | FUJITSU Semiconductor Limited | MB81F64842B-103LFN vs MB81F64842B-10LFN |
| KM48S8030BT-GH | Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | MB81F64842B-103LFN vs KM48S8030BT-GH |
| V54C365804VCT8PCL | Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Mosel Vitelic Corporation | MB81F64842B-103LFN vs V54C365804VCT8PCL |
| MD56V62800A-8TA | Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 | LAPIS Semiconductor Co Ltd | MB81F64842B-103LFN vs MD56V62800A-8TA |
| MT48LC8M8A2TG-7GL | Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Micron Technology Inc | MB81F64842B-103LFN vs MT48LC8M8A2TG-7GL |
| MB81F64842D-75FN | Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | FUJITSU Limited | MB81F64842B-103LFN vs MB81F64842D-75FN |
| K4S640832F-TC1L | Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | MB81F64842B-103LFN vs K4S640832F-TC1L |
| MB81F64842C-102LFN | Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | FUJITSU Semiconductor Limited | MB81F64842B-103LFN vs MB81F64842C-102LFN |
| V54C365804VBT8PC | Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Mosel Vitelic Corporation | MB81F64842B-103LFN vs V54C365804VBT8PC |