Part Details for MBR200200CT by GeneSic Semiconductor Inc
Results Overview of MBR200200CT by GeneSic Semiconductor Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (1 option)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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MBR200200CT Information
MBR200200CT by GeneSic Semiconductor Inc is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Price & Stock for MBR200200CT
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
MBR200200CT-ND
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DigiKey | DIODE MOD SCHOT 200V 100A 2TOWER Min Qty: 40 Lead time: 7 Weeks Container: Bulk | Temporarily Out of Stock |
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$78.2903 | Buy Now |
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NAC | 200V 200A Twin Tower Silicon Rectifier Module - Schottky (Standard Configuration) RoHS: Compliant Min Qty: 25 Package Multiple: 25 | 0 |
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$88.3800 / $96.9300 | Buy Now |
US Tariff Estimator: MBR200200CT by GeneSic Semiconductor Inc
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for MBR200200CT
MBR200200CT Part Data Attributes
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MBR200200CT
GeneSic Semiconductor Inc
Buy Now
Datasheet
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Compare Parts:
MBR200200CT
GeneSic Semiconductor Inc
200V 200A Silicon Schottky Rectifier in Twin Tower Package
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Package Description | R-Pufm-X2 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Application | Power | |
| Case Connection | Cathode | |
| Configuration | Common Cathode, 2 Elements | |
| Diode Element Material | Silicon | |
| Diode Type | Rectifier Diode | |
| Forward Voltage-Max (VF) | 0.92 V | |
| JESD-30 Code | R-PUFM-X2 | |
| Non-rep Pk Forward Current-Max | 1500 A | |
| Number of Elements | 2 | |
| Number of Phases | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Output Current-Max | 100 A | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Rep Pk Reverse Voltage-Max | 200 V | |
| Reverse Current-Max | 3000 µA | |
| Surface Mount | No | |
| Technology | Schottky | |
| Terminal Form | Unspecified | |
| Terminal Position | Upper | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified |
Alternate Parts for MBR200200CT
This table gives cross-reference parts and alternative options found for MBR200200CT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MBR200200CT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MBRF200200 | GeneSic Semiconductor Inc | Check for Price | Rectifier Diode, Schottky, 1 Phase, 2 Element, 100A, 200V V(RRM), Silicon, TO-244AB, | MBR200200CT vs MBRF200200 |
MBR200200CT Frequently Asked Questions (FAQ)
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The maximum operating junction temperature of the MBR200200CT is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
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To ensure proper cooling, it's recommended to attach a heat sink to the device and ensure good thermal contact. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 200W. Additionally, ensure good airflow around the heat sink to prevent overheating.
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The recommended gate drive voltage for the MBR200200CT is between 10V and 15V. However, the exact voltage may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
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Yes, the MBR200200CT is designed for high-frequency switching applications up to 200 kHz. However, it's essential to ensure that the device is properly cooled and the switching frequency is within the recommended range to prevent overheating and ensure reliable operation.
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The maximum allowable voltage transient for the MBR200200CT is 400V, as specified in the datasheet. However, it's recommended to ensure that the device is protected from voltage transients exceeding 300V to prevent damage and ensure reliable operation.