Part Details for MBRF200100 by GeneSic Semiconductor Inc
Results Overview of MBRF200100 by GeneSic Semiconductor Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (2 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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MBRF200100 Information
MBRF200100 by GeneSic Semiconductor Inc is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Price & Stock for MBRF200100
| Part # | Distributor | Description | Stock | Price | Buy | |
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NAC | Schottky - 100V/200A RoHS: Compliant Min Qty: 25 Package Multiple: 25 | 0 |
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RFQ |
US Tariff Estimator: MBRF200100 by GeneSic Semiconductor Inc
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for MBRF200100
MBRF200100 Part Data Attributes
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MBRF200100
GeneSic Semiconductor Inc
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Datasheet
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MBRF200100
GeneSic Semiconductor Inc
Rectifier Diode, Schottky, 1 Phase, 2 Element, 100A, 100V V(RRM), Silicon, TO-244AB,
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| Part Life Cycle Code | Transferred | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Application | Power | |
| Case Connection | Cathode | |
| Configuration | Common Cathode, 2 Elements | |
| Diode Element Material | Silicon | |
| Diode Type | Rectifier Diode | |
| Forward Voltage-Max (VF) | 0.84 V | |
| JEDEC-95 Code | TO-244AB | |
| JESD-30 Code | R-PUFM-X2 | |
| Non-rep Pk Forward Current-Max | 1500 A | |
| Number of Elements | 2 | |
| Number of Phases | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Output Current-Max | 100 A | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Rep Pk Reverse Voltage-Max | 100 V | |
| Reverse Current-Max | 1000 µA | |
| Surface Mount | No | |
| Technology | Schottky | |
| Terminal Form | Unspecified | |
| Terminal Position | Upper |
Alternate Parts for MBRF200100
This table gives cross-reference parts and alternative options found for MBRF200100. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MBRF200100, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MBR200100CT | Daco Semiconductor Co Ltd | Check for Price | Rectifier Diode, Schottky, 1 Phase, 2 Element, 100A, 100V V(RRM), Silicon, MODULE-2 | MBRF200100 vs MBR200100CT |
| MBR200100CT | GeneSic Semiconductor Inc | Check for Price | 100V 200A Silicon Schottky Rectifier in Twin Tower Package | MBRF200100 vs MBR200100CT |
MBRF200100 Frequently Asked Questions (FAQ)
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GeneSic recommends a 2-layer PCB with a thermal pad on the bottom side, and a heat sink with a thermal interface material (TIM) for efficient heat dissipation. A minimum of 1 oz copper thickness is recommended for the PCB.
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To ensure reliable operation in high-temperature environments, GeneSic recommends derating the device's current rating, using a heat sink, and ensuring good airflow around the device. Additionally, the device should be operated within the recommended junction temperature (Tj) range.
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GeneSic recommends using a gate drive circuit with a low impedance output stage, a high-current gate driver IC, and a gate resistor value between 1-10 ohms to minimize ringing and ensure reliable switching.
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GeneSic recommends using a voltage clamp or a transient voltage suppressor (TVS) to protect the device from overvoltage conditions. Additionally, a current sense resistor and a fuse or a current limiter can be used to protect the device from overcurrent conditions.
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GeneSic recommends storing the devices in their original packaging, away from direct sunlight and moisture. The devices should be handled with anti-static precautions, such as wrist straps or mats, to prevent electrostatic discharge (ESD) damage.