Part Details for MJD122T4 by STMicroelectronics
Results Overview of MJD122T4 by STMicroelectronics
- Distributor Offerings: (17 listings)
- Number of FFF Equivalents: (10 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Motor control systems
MJD122T4 Information
MJD122T4 by STMicroelectronics is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MJD122T4
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
89K0801
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Newark | Darlington Transistor, Npn, 100V, To-252, Transistor Polarity:Npn, No. Of Pins:3Pins, Transistor Mounting:Surface Mount, Operating Temperature Max:150°C, Product Range:-, Qualification:-, Collector Emitter Voltage Max:100V Rohs Compliant: Yes |Stmicroelectronics MJD122T4 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
07X1933
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Newark | Bipolar (Bjt) Single Transistor, Npn, 100 V, 20 W, 5 A, 1000 Rohs Compliant: Yes |Stmicroelectronics MJD122T4 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.3090 / $0.3440 | Buy Now |
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DISTI #
MJD122T4
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Avnet Americas | Darlington Transistors, NPN, 100 V, 8 A, 20 W, 1000 hFE, 3 Pins, TO-252 (DPAK) - Tape and Reel (Alt: MJD122T4) COO: Singapore RoHS: Compliant Min Qty: 5000 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
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$0.2330 / $0.2477 | Buy Now |
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STMicroelectronics | Low voltage NPN power Darlington transistor COO: Singapore RoHS: Compliant Min Qty: 1 | 7653 |
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$0.3600 / $1.1300 | Buy Now |
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Bristol Electronics | Min Qty: 9 | 7395 |
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$0.1560 / $0.6000 | Buy Now |
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Bristol Electronics | 2500 |
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RFQ | ||
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Bristol Electronics | 703 |
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RFQ | ||
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DISTI #
MJD122T4
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TME | Transistor: NPN, bipolar, Darlington, 100V, 8A, 20W, DPAK Min Qty: 1 | 4654 |
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$0.2210 / $0.9800 | Buy Now |
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ComSIT USA | AVAILABLE EU | 479 |
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RFQ | |
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ComSIT USA | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin ECCN: EAR99 RoHS: Compliant |
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RFQ |
US Tariff Estimator: MJD122T4 by STMicroelectronics
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for MJD122T4
MJD122T4 CAD Models
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MJD122T4 Part Data Attributes
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MJD122T4
STMicroelectronics
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Datasheet
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MJD122T4
STMicroelectronics
Low voltage NPN power Darlington transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-252 | |
| Package Description | ROHS COMPLIANT, DPAK-2/3 | |
| Pin Count | 3 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 14 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 8 A | |
| Collector-Emitter Voltage-Max | 100 V | |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
| DC Current Gain-Min (hFE) | 100 | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 20 W | |
| Power Dissipation-Max (Abs) | 20 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 4 V |
Alternate Parts for MJD122T4
This table gives cross-reference parts and alternative options found for MJD122T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD122T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MJD122 | Fairchild Semiconductor Corporation | Check for Price | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 | MJD122T4 vs MJD122 |
| KSH122TF | Fairchild Semiconductor Corporation | Check for Price | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin, DPAK-3/2 | MJD122T4 vs KSH122TF |
| MJD122 | Jiangsu Changjiang Electronics Technology Co Ltd | Check for Price | Power Bipolar Transistor | MJD122T4 vs MJD122 |
| KSH122TM | onsemi | Check for Price | NPN Silicon Darlington Transistor, DPAK-3, 2500-REEL | MJD122T4 vs KSH122TM |
| MJD122TF | Rochester Electronics LLC | Check for Price | 8A, 100V, NPN, Si, POWER TRANSISTOR, TO-252, DPAK-3 | MJD122T4 vs MJD122TF |
| MJD122G | onsemi | Check for Price | 8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE | MJD122T4 vs MJD122G |
| MJD122TF | Fairchild Semiconductor Corporation | Check for Price | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 | MJD122T4 vs MJD122TF |
| KSH122-TF | Samsung Semiconductor | Check for Price | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin | MJD122T4 vs KSH122-TF |
| MJD122 | Motorola Semiconductor Products | Check for Price | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin | MJD122T4 vs MJD122 |
| MJD122-TP | Micro Commercial Components | Check for Price | Power Bipolar Transistor, Plastic/Epoxy, 2 Pin, DPAK-3 | MJD122T4 vs MJD122-TP |
MJD122T4 Frequently Asked Questions (FAQ)
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The MJD122T4 can operate from -40°C to 150°C, making it suitable for high-reliability applications.
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To ensure proper biasing, connect the base of the transistor to a voltage divider network that provides a stable voltage reference, and ensure the collector-emitter voltage is within the recommended range.
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To minimize thermal resistance, use a thermal pad on the PCB, and ensure the transistor is mounted on a heat sink or thermal interface material. Keep the thermal path as short as possible and avoid thermal vias.
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Yes, the MJD122T4 can be used in switching applications, but be aware of the maximum switching frequency (typically up to 100 kHz) and ensure the transistor is properly biased to avoid overheating.
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To protect the MJD122T4 from ESD, use anti-static packaging, handle the device by the body or with an anti-static wrist strap, and ensure the PCB has ESD protection circuits.