Part Details for MJD127-T1 by Samsung Semiconductor
Overview of MJD127-T1 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Part Details for MJD127-T1
MJD127-T1 CAD Models
MJD127-T1 Part Data Attributes
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MJD127-T1
Samsung Semiconductor
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Datasheet
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MJD127-T1
Samsung Semiconductor
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Collector Current-Max (IC) | 8 A | |
| Collector-Base Capacitance-Max | 300 pF | |
| Collector-Emitter Voltage-Max | 100 V | |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
| DC Current Gain-Min (hFE) | 100 | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | PNP | |
| Power Dissipation Ambient-Max | 20 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 4 V |
Alternate Parts for MJD127-T1
This table gives cross-reference parts and alternative options found for MJD127-T1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD127-T1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MJD127 | Power Bipolar Transistor | Jiangsu Changjiang Electronics Technology Co Ltd | MJD127-T1 vs MJD127 |
| MJD127T4 | 8.0 A, 100 V PNP Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL | onsemi | MJD127-T1 vs MJD127T4 |
| MJD127T4 | Low voltage PNP power Darlington transistor | STMicroelectronics | MJD127-T1 vs MJD127T4 |
| KSH127 | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 | Samsung Semiconductor | MJD127-T1 vs KSH127 |
| CJD127BK | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, | Central Semiconductor Corp | MJD127-T1 vs CJD127BK |
| CJD127 | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 | Central Semiconductor Corp | MJD127-T1 vs CJD127 |
| KSH127TF | PNP Silicon Darlington Transistor, 2000-REEL | onsemi | MJD127-T1 vs KSH127TF |
| KSH127 | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 | Fairchild Semiconductor Corporation | MJD127-T1 vs KSH127 |
| MJD127T4G | 8.0 A, 100 V PNP Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL | onsemi | MJD127-T1 vs MJD127T4G |
| MJD127 | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 | Fairchild Semiconductor Corporation | MJD127-T1 vs MJD127 |