MT41K256M16RE-125:D
Micron Technology Inc
Description: DDR DRAM, 256MX16, CMOS, PBGA96, 10 X 14 MM, LEAD FREE, FBGA-96

Overview of MT41K256M16RE-125:D by Micron Technology Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Computing and Data Storage

Available Datasheets

Part # Manufacturer Description Datasheet
DBL5W5P543A40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 5W5 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Without Accessory on PCB.
DEL2V2P543H40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Harpoons for 2.4mm PCB Thickness.
DC8W8P500H30LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 8W8 Pin Right Angle Solder 30A, Europe Standard, 200 Cycles, Front: Without Accessory, Back: Harpoons for 2.4mm PCB Thickness.

Price & Stock for MT41K256M16RE-125:D by Micron Technology Inc

Part # Manufacturer Description Stock Price Buy
NexGen Digital   1
RFQ

CAD Models for MT41K256M16RE-125:D by Micron Technology Inc
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Part Data Attributes for MT41K256M16RE-125:D by Micron Technology Inc

MT41K256M16RE-125:D
Micron Technology Inc
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MICRON TECHNOLOGY INC
Package Description
TFBGA, BGA96,9X16,32
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.36
Samacsys Manufacturer
Micron
Access Mode
MULTI BANK PAGE BURST
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
800 MHz
I/O Type
COMMON
Interleaved Burst Length
8
JESD-30 Code
R-PBGA-B96
Length
14 mm
Memory Density
4294967296 bit
Memory IC Type
DDR3L DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
96
Number of Words
268435456 words
Number of Words Code
256000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
95 °C
Operating Temperature-Min
Organization
256MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TFBGA
Package Equivalence Code
BGA96,9X16,32
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status
Not Qualified
Refresh Cycles
8192
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
8
Standby Current-Max
0.02 A
Supply Current-Max
0.32 mA
Supply Voltage-Max (Vsup)
1.45 V
Supply Voltage-Min (Vsup)
1.283 V
Supply Voltage-Nom (Vsup)
1.35 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
OTHER
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Width
10 mm
Want to compare parts?
  1. MT41K256M16RE-125:D
    Micron Technology Inc
    DDR DRAM, 256MX16, CMOS, PBGA96, 10 X 14 MM, LEAD FREE, FBGA-96
    VS

Alternate Parts for MT41K256M16RE-125:D

This table gives cross-reference parts and alternative options found for MT41K256M16RE-125:D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT41K256M16RE-125:D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MT41K256M16RE-15EIT:D DDR DRAM, 256MX16, CMOS, PBGA96, 10 X 14 MM, LEAD FREE, FBGA-96 Micron Technology Inc MT41K256M16RE-125:D vs MT41K256M16RE-15EIT:D
Part Number Description Manufacturer Compare
MT41K256M16HA-187E:E DDR DRAM, 256MX16, CMOS, PBGA96, 9 X 14 MM, LEAD FREE, FBGA-96 Micron Technology Inc MT41K256M16RE-125:D vs MT41K256M16HA-187E:E
MT41K256M16HA-125XIT DDR DRAM, 256MX16, CMOS, PBGA96, 10 X 14 MM, LEAD FREE, FBGA-96 Micron Technology Inc MT41K256M16RE-125:D vs MT41K256M16HA-125XIT
H5TC4G63MFR-H9I DDR DRAM, 256MX16, 0.255ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 SK Hynix Inc MT41K256M16RE-125:D vs H5TC4G63MFR-H9I
MT41K256M16TW-107AIT:P DDR DRAM, 256MX16, CMOS, PBGA96, 8 X 14 MM, LEAD FREE, FBGA-96 Micron Technology Inc MT41K256M16RE-125:D vs MT41K256M16TW-107AIT:P
MT41K256M16HA-107M:E DDR DRAM, 256MX16, CMOS, PBGA96, 9 X 14 MM, LEAD FREE, FBGA-96 Micron Technology Inc MT41K256M16RE-125:D vs MT41K256M16HA-107M:E
MT41K256M16HA-107 DDR DRAM, 256MX16, CMOS, PBGA96, 10 X 14 MM, LEAD FREE, FBGA-96 Micron Technology Inc MT41K256M16RE-125:D vs MT41K256M16HA-107
MT41K256M16HA-125AIT DDR DRAM, 256MX16, CMOS, PBGA96, 10 X 14 MM, LEAD FREE, FBGA-96 Micron Technology Inc MT41K256M16RE-125:D vs MT41K256M16HA-125AIT
H5TC4G63MFR-H9C DDR DRAM, 256MX16, 0.255ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 SK Hynix Inc MT41K256M16RE-125:D vs H5TC4G63MFR-H9C
MT41K256M16HA-15EIT:E DDR DRAM, 256MX16, CMOS, PBGA96, 9 X 14 MM, LEAD FREE, FBGA-96 Micron Technology Inc MT41K256M16RE-125:D vs MT41K256M16HA-15EIT:E
MT41K256M16HA-125IT DDR DRAM, 256MX16, CMOS, PBGA96, 10 X 14 MM, LEAD FREE, FBGA-96 Micron Technology Inc MT41K256M16RE-125:D vs MT41K256M16HA-125IT

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