Datasheets
MT41K256M8-187E by: Micron Technology Inc

DDR DRAM, 256MX8, 1.875ns, CMOS, PBGA78, 9 X 11.5 MM, LEAD FREE, FBGA-78

Part Details for MT41K256M8-187E by Micron Technology Inc

Overview of MT41K256M8-187E by Micron Technology Inc

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage

Part Details for MT41K256M8-187E

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MT41K256M8-187E Part Data Attributes:

MT41K256M8-187E Micron Technology Inc
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MT41K256M8-187E Micron Technology Inc DDR DRAM, 256MX8, 1.875ns, CMOS, PBGA78, 9 X 11.5 MM, LEAD FREE, FBGA-78
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Part Package Code BGA
Package Description TFBGA,
Pin Count 78
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.36
Access Mode MULTI BANK PAGE BURST
Access Time-Max 1.875 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B78
JESD-609 Code e1
Length 11.5 mm
Memory Density 2147483648 bit
Memory IC Type DDR DRAM
Memory Width 8
Number of Functions 1
Number of Ports 1
Number of Terminals 78
Number of Words 268435456 words
Number of Words Code 256000000
Operating Mode SYNCHRONOUS
Organization 256MX8
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 1.45 V
Supply Voltage-Min (Vsup) 1.283 V
Supply Voltage-Nom (Vsup) 1.35 V
Surface Mount YES
Technology CMOS
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 9 mm

Alternate Parts for MT41K256M8-187E

This table gives cross-reference parts and alternative options found for MT41K256M8-187E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT41K256M8-187E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4B2G0846D-HYH90 DDR DRAM, 256MX8, 0.25ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 Samsung Semiconductor MT41K256M8-187E vs K4B2G0846D-HYH90
EDJ2108BASE-8C-F DDR DRAM, 256MX8, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 Elpida Memory Inc MT41K256M8-187E vs EDJ2108BASE-8C-F
MT41K256M8HX-15E:D DDR DRAM, 256MX8, CMOS, PBGA78, 9 X 11.50 MM, LEAD FREE, FBGA-78 Micron Technology Inc MT41K256M8-187E vs MT41K256M8HX-15E:D
H5TQ2G83DFR-G7L DDR DRAM, 256MX8, 0.3ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 SK Hynix Inc MT41K256M8-187E vs H5TQ2G83DFR-G7L
MT41J256M8HX-187EAAT:D DDR DRAM, 256MX8, CMOS, PBGA78, 9 X 11.50 MM, LEAD FREE, FBGA-78 Micron Technology Inc MT41K256M8-187E vs MT41J256M8HX-187EAAT:D
H5TQ2G83EFR-G7C DDR DRAM, 256MX8, 0.3ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 SK Hynix Inc MT41K256M8-187E vs H5TQ2G83EFR-G7C
H5TQ2G83FFR-PBJ DDR DRAM, 256MX8, 0.225ns, CMOS, PBGA78, FBGA-78 SK Hynix Inc MT41K256M8-187E vs H5TQ2G83FFR-PBJ
H5TQ2G83FFR-H9C DDR DRAM, 256MX8, 0.255ns, CMOS, PBGA78, FBGA-78 SK Hynix Inc MT41K256M8-187E vs H5TQ2G83FFR-H9C
NT5CC256M8BN-DI DDR DRAM, 256MX8, 0.225ns, CMOS, PBGA78, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, WBGA-78 Nanya Technology Corporation MT41K256M8-187E vs NT5CC256M8BN-DI
H5TQ2G83CFR-PBC DDR DRAM, 256MX8, 20ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 SK Hynix Inc MT41K256M8-187E vs H5TQ2G83CFR-PBC

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