Part Details for MT46V64M8TG-6T:D by Micron Technology Inc
Overview of MT46V64M8TG-6T:D by Micron Technology Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Computing and Data Storage
Price & Stock for MT46V64M8TG-6T:D
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 164 |
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RFQ | ||
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Velocity Electronics | Our Stock | 4 |
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RFQ |
Part Details for MT46V64M8TG-6T:D
MT46V64M8TG-6T:D CAD Models
MT46V64M8TG-6T:D Part Data Attributes
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MT46V64M8TG-6T:D
Micron Technology Inc
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Datasheet
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MT46V64M8TG-6T:D
Micron Technology Inc
DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Part Package Code | TSOP | |
| Package Description | 0.400 INCH, PLASTIC, TSOP-66 | |
| Pin Count | 66 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G66 | |
| JESD-609 Code | e0 | |
| Length | 22.22 mm | |
| Memory Density | 536870912 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 66 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 64MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSSOP | |
| Package Equivalence Code | TSSOP66,.46 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
| Peak Reflow Temperature (Cel) | 235 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.005 A | |
| Supply Current-Max | 0.405 mA | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.65 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Width | 10.16 mm |
Alternate Parts for MT46V64M8TG-6T:D
This table gives cross-reference parts and alternative options found for MT46V64M8TG-6T:D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT46V64M8TG-6T:D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4H510838J-LLB30 | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | MT46V64M8TG-6T:D vs K4H510838J-LLB30 |
| K4H510838D-UCB30 | DDR DRAM, 64MX8, 0.6ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | MT46V64M8TG-6T:D vs K4H510838D-UCB30 |
| MT46V64M8TG-6T:F | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | MT46V64M8TG-6T:D vs MT46V64M8TG-6T:F |
| H5DU5182ETR-J3C | DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | SK Hynix Inc | MT46V64M8TG-6T:D vs H5DU5182ETR-J3C |
| K4H510838J-LCB30 | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | MT46V64M8TG-6T:D vs K4H510838J-LCB30 |
| K4H510838C-ULB30 | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | MT46V64M8TG-6T:D vs K4H510838C-ULB30 |
| MT46V64M8P-6T:F | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | MT46V64M8TG-6T:D vs MT46V64M8P-6T:F |
| MT46V64M8P-6TL:F | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | MT46V64M8TG-6T:D vs MT46V64M8P-6TL:F |
| MT46V64M8TG-6TL:F | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | MT46V64M8TG-6T:D vs MT46V64M8TG-6TL:F |
| K4H510838C-UCB3T | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | MT46V64M8TG-6T:D vs K4H510838C-UCB3T |