Part Details for MT47H128M16RT-25EIT:C by Micron Technology Inc
Results Overview of MT47H128M16RT-25EIT:C by Micron Technology Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (6 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MT47H128M16RT-25EIT:C Information
MT47H128M16RT-25EIT:C by Micron Technology Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for MT47H128M16RT-25EIT:C
| Part # | Distributor | Description | Stock | Price | Buy | |
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Chip Stock | 1.9V2GbitParallel400MHz400psSMTU69ASDRAMDDR2MemoryIC-FBGA-84 | 2959 |
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RFQ |
US Tariff Estimator: MT47H128M16RT-25EIT:C by Micron Technology Inc
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for MT47H128M16RT-25EIT:C
MT47H128M16RT-25EIT:C Part Data Attributes
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MT47H128M16RT-25EIT:C
Micron Technology Inc
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Datasheet
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Compare Parts:
MT47H128M16RT-25EIT:C
Micron Technology Inc
DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA84, 9 X 12.50 MM, ROHS COMPLIANT, FBGA-84
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Part Package Code | BGA | |
| Package Description | TFBGA, BGA84,9X15,32 | |
| Pin Count | 84 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Factory Lead Time | 6 Weeks, 1 Day |
Alternate Parts for MT47H128M16RT-25EIT:C
This table gives cross-reference parts and alternative options found for MT47H128M16RT-25EIT:C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT47H128M16RT-25EIT:C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MT47H128M16RT-25EAIT:C | Micron Technology Inc | Check for Price | DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA84, 9 X 12.5 M, ROHS COMPLIANT, FBGA-84 | MT47H128M16RT-25EIT:C vs MT47H128M16RT-25EAIT:C |
| MT47H128M16RT-25EAAT:A | Micron Technology Inc | Check for Price | DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA84, 9 X 12.5 M, ROHS COMPLIANT, FBGA-84 | MT47H128M16RT-25EIT:C vs MT47H128M16RT-25EAAT:A |
| MT47H128M16RT-25EXIT:C | Micron Technology Inc | Check for Price | DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA84, 9 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | MT47H128M16RT-25EIT:C vs MT47H128M16RT-25EXIT:C |
| MT47H128M16RT-25E:A | Micron Technology Inc | Check for Price | DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA84, 9 X 12.5 M, ROHS COMPLIANT, FBGA-84 | MT47H128M16RT-25EIT:C vs MT47H128M16RT-25E:A |
| MT47H128M16PK-25E:C | Micron Technology Inc | Check for Price | DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA84, 9 X 12.50 MM, FBGA-84 | MT47H128M16RT-25EIT:C vs MT47H128M16PK-25E:C |
| MT47H128M16PK-25EAAT:C | Micron Technology Inc | Check for Price | DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA84, FBGA-84 | MT47H128M16RT-25EIT:C vs MT47H128M16PK-25EAAT:C |
MT47H128M16RT-25EIT:C Frequently Asked Questions (FAQ)
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The maximum operating temperature range for this module is 0°C to 85°C.
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To ensure signal integrity, use a signal integrity analysis tool to simulate the signal transmission and optimize the PCB design. Additionally, use a clock signal with a high slew rate and a low jitter to minimize signal degradation.
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The recommended voltage for the VDD and VDDQ power supplies is 1.2V ± 0.06V.
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During self-refresh mode, the DRAM module will automatically refresh the memory cells. The host controller does not need to issue refresh commands.
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The maximum current consumption of this module is 1.5A for VDD and 1.5A for VDDQ.