Memory
MT47H128M4F6-37ELIT:D
Micron Technology Inc
Description: DDR DRAM, 128MX4, CMOS, PBGA60, 10 X 10 MM, FBGA-60

Overview of MT47H128M4F6-37ELIT:D by Micron Technology Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Available Datasheets

Part # Manufacturer Description Datasheet
DBL5W5P543A40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 5W5 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Without Accessory on PCB.
DEL2V2P543H40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Harpoons for 2.4mm PCB Thickness.
DC8W8P500H30LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 8W8 Pin Right Angle Solder 30A, Europe Standard, 200 Cycles, Front: Without Accessory, Back: Harpoons for 2.4mm PCB Thickness.

CAD Models for MT47H128M4F6-37ELIT:D by Micron Technology Inc
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Part Data Attributes for MT47H128M4F6-37ELIT:D by Micron Technology Inc

MT47H128M4F6-37ELIT:D
Micron Technology Inc
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MICRON TECHNOLOGY INC
Part Package Code
BGA
Package Description
TFBGA,
Pin Count
60
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.28
Access Mode
FOUR BANK PAGE BURST
Additional Feature
AUTO/SELF REFRESH
JESD-30 Code
S-PBGA-B60
JESD-609 Code
e0
Length
10 mm
Memory Density
536870912 bit
Memory IC Type
DDR2 DRAM
Memory Width
4
Number of Functions
1
Number of Ports
1
Number of Terminals
60
Number of Words
134217728 words
Number of Words Code
128000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Organization
128MX4
Package Body Material
PLASTIC/EPOXY
Package Code
TFBGA
Package Shape
SQUARE
Package Style
GRID ARRAY
Qualification Status
Not Qualified
Seated Height-Max
1.2 mm
Self Refresh
YES
Surface Mount
YES
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Finish
TIN LEAD SILVER
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Width
10 mm
Want to compare parts?
  1. MT47H128M4F6-37ELIT:D
    Micron Technology Inc
    DDR DRAM, 128MX4, CMOS, PBGA60, 10 X 10 MM, FBGA-60
    VS

Alternate Parts for MT47H128M4F6-37ELIT:D

This table gives cross-reference parts and alternative options found for MT47H128M4F6-37ELIT:D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT47H128M4F6-37ELIT:D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MT47H128M4F6-3LIT:D DDR DRAM, 128MX4, CMOS, PBGA60, 10 X 10 MM, FBGA-60 Micron Technology Inc MT47H128M4F6-37ELIT:D vs MT47H128M4F6-3LIT:D
MT47H128M4F6-3ELIT:D DDR DRAM, 128MX4, CMOS, PBGA60, 10 X 10 MM, FBGA-60 Micron Technology Inc MT47H128M4F6-37ELIT:D vs MT47H128M4F6-3ELIT:D
MT47H128M4F6-5ELIT:D DDR DRAM, 128MX4, CMOS, PBGA60, 10 X 10 MM, FBGA-60 Micron Technology Inc MT47H128M4F6-37ELIT:D vs MT47H128M4F6-5ELIT:D
Part Number Description Manufacturer Compare
MT47H128M4CB-25IT:B DDR DRAM, 128MX4, 0.4ns, CMOS, PBGA60, 12 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT47H128M4F6-37ELIT:D vs MT47H128M4CB-25IT:B
K4H510438B-ZLCC0 DDR DRAM, 128MX4, 0.65ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 Samsung Semiconductor MT47H128M4F6-37ELIT:D vs K4H510438B-ZLCC0
HYB18T512400B2FL-3S DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60 Qimonda AG MT47H128M4F6-37ELIT:D vs HYB18T512400B2FL-3S
HY5PS12421BLFP-S6 DDR DRAM, 128MX4, 0.4ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 SK Hynix Inc MT47H128M4F6-37ELIT:D vs HY5PS12421BLFP-S6
HY5DU12422CLFP-K DDR DRAM, 128MX4, 0.75ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 SK Hynix Inc MT47H128M4F6-37ELIT:D vs HY5DU12422CLFP-K
MT47H128M4GB-3ELIT:B DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, 12 X 10 MM, FBGA-60 Micron Technology Inc MT47H128M4F6-37ELIT:D vs MT47H128M4GB-3ELIT:B
V58C512404SBLS-75 DDR DRAM, 128MX4, 0.75ns, CMOS, PBGA60, MO-027, FBGA-60 ProMOS Technologies Inc MT47H128M4F6-37ELIT:D vs V58C512404SBLS-75
HY5PS12421CFP-S6I DDR DRAM, 128MX4, 0.4ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 SK Hynix Inc MT47H128M4F6-37ELIT:D vs HY5PS12421CFP-S6I
MT47H128M4JN-3IT:F DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, 8 X 10 MM, FBGA-60 Micron Technology Inc MT47H128M4F6-37ELIT:D vs MT47H128M4JN-3IT:F
MT47H128M4CF-3IT:F DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, 8 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT47H128M4F6-37ELIT:D vs MT47H128M4CF-3IT:F

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