Datasheets
MT47H32M16NF-25E:H by:

DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, FBGA-84

Part Details for MT47H32M16NF-25E:H by Micron Technology Inc

Overview of MT47H32M16NF-25E:H by Micron Technology Inc

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Price & Stock for MT47H32M16NF-25E:H

Part # Distributor Description Stock Price Buy
DISTI # 80AH8130
Newark Dram, 32M X 16Bit, 0 To 85Deg C, Dram Type:Ddr2, Memory Configuration:32M X 16Bit, Clock Frequency Max:400Mhz, Ic Case/Package:Tfbga, No. Of Pins:84Pins, Supply Voltage Nom:1.8V, Ic Mounting:Surface Mount, Product Range:- Rohs Compliant: Yes |Micron MT47H32M16NF-25E:H Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 303
  • 1 $3.5000
  • 10 $3.5000
  • 25 $3.5000
  • 50 $3.2300
  • 100 $3.2300
  • 250 $3.2300
  • 500 $3.2300
$3.2300 / $3.5000 Buy Now
DISTI # 25AK3653
Newark Dram, 32M X 16Bit, 0 To 85Deg C Rohs Compliant: Yes |Micron MT47H32M16NF-25E:H Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $4.6000
  • 10 $4.1600
  • 25 $3.9800
  • 50 $3.8200
  • 100 $3.6400
$3.6400 / $4.6000 Buy Now
DISTI # MT47H32M16NF-25E:H-ND
DigiKey IC DRAM 512MBIT PARALLEL 84FBGA Min Qty: 1 Lead time: 2 Weeks Container: Bulk 909
In Stock
  • 1 $4.5500
  • 10 $4.1270
  • 25 $4.0372
  • 50 $4.0154
  • 100 $3.6003
  • 250 $3.5872
  • 500 $3.4561
  • 1,368 $3.2857
$3.2857 / $4.5500 Buy Now
DISTI # MT47H32M16NF-25E:H
Avnet Americas DRAM Chip DDR2 SDRAM 512M-Bit 32M x 16 1.8V 84-Pin FBGA T/R - Tape and Reel (Alt: MT47H32M16NF-25E:H) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 18 Weeks, 0 Days Container: Reel 2000
  • 2,000 $2.9820
  • 4,000 $2.9400
  • 8,000 $2.8560
  • 12,000 $2.7930
  • 16,000 $2.6880
  • 20,000 $2.6460
  • 200,000 $2.6040
$2.6040 / $2.9820 Buy Now
DISTI # MT47H32M16NF-25E:H
Avnet Americas DRAM, DDR2, 512 Mbit, 32M x 16bit, 400 MHz, 84 Pins, FBGA - Trays (Alt: MT47H32M16NF-25E:H) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Tray 1926
  • 1 $3.0450
  • 10 $2.9610
  • 30 $2.8770
  • 50 $2.8140
  • 100 $2.7300
  • 250 $2.6460
  • 500 $2.5620
$2.5620 / $3.0450 Buy Now
DISTI # 340-248530-TRAY
Mouser Electronics DRAM DDR2 512M 32MX16 FBGA U87B RoHS: Compliant 8129
  • 1 $4.5000
  • 10 $3.9700
  • 100 $3.5000
  • 500 $3.4600
  • 1,000 $3.1900
$3.1900 / $4.5000 Buy Now
DISTI # E54:1762_07668731
Arrow Electronics DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin FBGA Tray RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 11 Weeks Date Code: 2414 Europe - 7863
  • 1 $4.2170
$4.2170 Buy Now
DISTI # V36:1790_07226980
Arrow Electronics DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin FBGA Tray RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2334 Americas - 2946
  • 1 $4.4510
  • 10 $4.2630
$4.2630 / $4.4510 Buy Now
DISTI # 80924713
Verical DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin FBGA Tray RoHS: Compliant Min Qty: 2 Package Multiple: 1 Date Code: 2414 Americas - 7863
  • 2 $4.2170
$4.2170 Buy Now
DISTI # 70329632
Verical DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin FBGA Tray RoHS: Compliant Min Qty: 3 Package Multiple: 1 Date Code: 2334 Americas - 2946
  • 3 $4.4510
  • 10 $4.2630
$4.2630 / $4.4510 Buy Now
Bristol Electronics   50
RFQ
Bristol Electronics   928
RFQ
Quest Components 32MX16 DDR DRAM, 0.4NS, PBGA84 4
  • 1 $6.0000
  • 3 $5.0000
$5.0000 / $6.0000 Buy Now
Quest Components 32MX16 DDR DRAM, 0.4NS, PBGA84 784
  • 1 $7.1775
  • 227 $3.9476
  • 508 $3.5888
$3.5888 / $7.1775 Buy Now
Quest Components 32MX16 DDR DRAM, 0.4NS, PBGA84 564
  • 1 $10.5660
  • 154 $5.8113
  • 345 $5.2830
$5.2830 / $10.5660 Buy Now
DISTI # SMC-MT47H32M16NF-25E:H
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days Date Code: 4221 1114
RFQ
DISTI # MT47H32M16NF-25E:H
Avnet Asia DRAM, DDR2, 512 Mbit, 32M x 16bit, 400 MHz, 84 Pins, FBGA (Alt: MT47H32M16NF-25E:H) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks, 0 Days 0
  • 2,000 $2.7632
  • 4,000 $2.7273
  • 6,000 $2.6923
  • 10,000 $2.6582
  • 20,000 $2.5926
  • 50,000 $2.5301
  • 100,000 $2.4706
$2.4706 / $2.7632 Buy Now
DISTI # MT47H32M16NF-25E:H
Avnet Silica DRAM, DDR2, 512 Mbit, 32M x 16bit, 400 MHz, 84 Pins, FBGA (Alt: MT47H32M16NF-25E:H) RoHS: Compliant Min Qty: 1368 Package Multiple: 1368 Lead time: 13 Weeks, 0 Days Silica - 0
Buy Now
New Advantage Corporation DRAM Chip DDR2 SDRAM RoHS: Compliant Min Qty: 1 Package Multiple: 1 8777
  • 1 $4.0000
  • 100 $3.5000
  • 500 $3.2900
  • 1,000 $2.5700
$2.5700 / $4.0000 Buy Now
Vyrian OEM/CM Only 500
RFQ
Win Source Electronics IC SDRAM 512MBIT 400MHZ 84FBGA 49890
  • 18 $2.9110
  • 42 $2.3890
  • 65 $2.3140
  • 90 $2.2400
  • 116 $2.1650
  • 155 $1.9410
$1.9410 / $2.9110 Buy Now

Part Details for MT47H32M16NF-25E:H

MT47H32M16NF-25E:H CAD Models

MT47H32M16NF-25E:H Part Data Attributes

MT47H32M16NF-25E:H Micron Technology Inc
Buy Now Datasheet
Compare Parts:
MT47H32M16NF-25E:H Micron Technology Inc DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, FBGA-84
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICRON TECHNOLOGY INC
Part Package Code BGA
Package Description FBGA-84
Pin Count 84
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Factory Lead Time 18 Weeks
Samacsys Manufacturer Micron
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 400 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B84
JESD-609 Code e1
Length 12.5 mm
Memory Density 536870912 bit
Memory IC Type DDR2 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 84
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min
Organization 32MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA84,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 4,8
Standby Current-Max 0.01 A
Supply Current-Max 0.215 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Finish Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Width 8 mm

Alternate Parts for MT47H32M16NF-25E:H

This table gives cross-reference parts and alternative options found for MT47H32M16NF-25E:H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT47H32M16NF-25E:H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT47H32M16NF-25EIT:HTR DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, FBGA-84 Micron Technology Inc MT47H32M16NF-25E:H vs MT47H32M16NF-25EIT:HTR
MT47H32M16NF-25EAIT:H DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc MT47H32M16NF-25E:H vs MT47H32M16NF-25EAIT:H
Part Number Description Manufacturer Compare
K4T51163QQ-BCF70 DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 Samsung Semiconductor MT47H32M16NF-25E:H vs K4T51163QQ-BCF70
AS4C32M16D2B-25BIN DDR DRAM, Alliance Memory Inc MT47H32M16NF-25E:H vs AS4C32M16D2B-25BIN
M14D5121632A-2.5BIAG2A DDR DRAM, Elite Semiconductor Memory Technology Inc MT47H32M16NF-25E:H vs M14D5121632A-2.5BIAG2A
IS43DR16320C-25DBLI-TR DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 Integrated Silicon Solution Inc MT47H32M16NF-25E:H vs IS43DR16320C-25DBLI-TR
M14D5121632A-2.5BIG2K DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, BGA-84 Elite Semiconductor Memory Technology Inc MT47H32M16NF-25E:H vs M14D5121632A-2.5BIG2K
K4T51163QQ-BPF70 DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, FBGA-84 Samsung Semiconductor MT47H32M16NF-25E:H vs K4T51163QQ-BPF70
MT47H32M16HR-25EIT:H DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc MT47H32M16NF-25E:H vs MT47H32M16HR-25EIT:H
SCX18T512160AF-25D DDR DRAM, Xi'an UniIC Semiconductors Co Ltd MT47H32M16NF-25E:H vs SCX18T512160AF-25D
NT5TU32M16EG-ACA DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, VFBGA-84 Nanya Technology Corporation MT47H32M16NF-25E:H vs NT5TU32M16EG-ACA
M14D5121632A-2.5BBG2A DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, BGA-84 Elite Semiconductor Memory Technology Inc MT47H32M16NF-25E:H vs M14D5121632A-2.5BBG2A

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