There are no models available for this part yet.
Overview of MT4LC4M16N3TG-5 by Micron Technology Inc
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Entertainment and Gaming
Price & Stock for MT4LC4M16N3TG-5 by Micron Technology Inc
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
| Quest Components | 4M X 16 EDO DRAM, 50 ns, 50 Pin Plastic SMT | 5 |
|
Buy Now |
CAD Models for MT4LC4M16N3TG-5 by Micron Technology Inc
Part Data Attributes for MT4LC4M16N3TG-5 by Micron Technology Inc
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
MICRON TECHNOLOGY INC
|
|
Part Package Code
|
TSOP
|
|
Package Description
|
0.400 INCH, PLASTIC, TSOP-50
|
|
Pin Count
|
50
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8542.32.00.02
|
|
Access Mode
|
FAST PAGE WITH EDO
|
|
Access Time-Max
|
50 ns
|
|
Additional Feature
|
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
|
|
I/O Type
|
COMMON
|
|
JESD-30 Code
|
R-PDSO-G50
|
|
JESD-609 Code
|
e0
|
|
Length
|
20.95 mm
|
|
Memory Density
|
67108864 bit
|
|
Memory IC Type
|
EDO DRAM
|
|
Memory Width
|
16
|
|
Number of Functions
|
1
|
|
Number of Ports
|
1
|
|
Number of Terminals
|
50
|
|
Number of Words
|
4194304 words
|
|
Number of Words Code
|
4000000
|
|
Operating Mode
|
SYNCHRONOUS
|
|
Operating Temperature-Max
|
70 °C
|
|
Operating Temperature-Min
|
|
|
Organization
|
4MX16
|
|
Output Characteristics
|
3-STATE
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Code
|
TSOP2
|
|
Package Equivalence Code
|
TSOP50,.46,32
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE, THIN PROFILE
|
|
Qualification Status
|
Not Qualified
|
|
Refresh Cycles
|
8192
|
|
Seated Height-Max
|
1.2 mm
|
|
Self Refresh
|
NO
|
|
Standby Current-Max
|
0.0005 A
|
|
Supply Current-Max
|
0.155 mA
|
|
Supply Voltage-Max (Vsup)
|
3.6 V
|
|
Supply Voltage-Min (Vsup)
|
3 V
|
|
Supply Voltage-Nom (Vsup)
|
3.3 V
|
|
Surface Mount
|
YES
|
|
Technology
|
CMOS
|
|
Temperature Grade
|
COMMERCIAL
|
|
Terminal Finish
|
TIN LEAD
|
|
Terminal Form
|
GULL WING
|
|
Terminal Pitch
|
0.8 mm
|
|
Terminal Position
|
DUAL
|
|
Width
|
10.16 mm
|
Alternate Parts for MT4LC4M16N3TG-5
This table gives cross-reference parts and alternative options found for MT4LC4M16N3TG-5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT4LC4M16N3TG-5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HM5164165ATT-5 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Hitachi Ltd | MT4LC4M16N3TG-5 vs HM5164165ATT-5 |
| TC5165165AFT-50 | IC 4M X 16 EDO DRAM, 50 ns, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50, Dynamic RAM | Toshiba America Electronic Components | MT4LC4M16N3TG-5 vs TC5165165AFT-50 |
| K4E641612B-TL500 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | MT4LC4M16N3TG-5 vs K4E641612B-TL500 |
| K4E641612C-TC50 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | MT4LC4M16N3TG-5 vs K4E641612C-TC50 |
| KM416V4004BS-L5 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | MT4LC4M16N3TG-5 vs KM416V4004BS-L5 |
| K4E661612E-TC50 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | MT4LC4M16N3TG-5 vs K4E661612E-TC50 |
| HYB3165165BT-50 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Siemens | MT4LC4M16N3TG-5 vs HYB3165165BT-50 |
| K4E641612B-TC500 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | MT4LC4M16N3TG-5 vs K4E641612B-TC500 |
| IS41LV16400-50T | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 | Integrated Silicon Solution Inc | MT4LC4M16N3TG-5 vs IS41LV16400-50T |
| HYB3165165ATL-50 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50 | Siemens | MT4LC4M16N3TG-5 vs HYB3165165ATL-50 |