Part Details for MT58L256V18PB-4.4 by Micron Technology Inc
Overview of MT58L256V18PB-4.4 by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MT58L256V18PB-4.4
MT58L256V18PB-4.4 CAD Models
MT58L256V18PB-4.4 Part Data Attributes:
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MT58L256V18PB-4.4
Micron Technology Inc
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Datasheet
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MT58L256V18PB-4.4
Micron Technology Inc
Standard SRAM, 256KX18, 2.9ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Part Package Code | BGA | |
| Package Description | 14 X 22 MM, BGA-119 | |
| Pin Count | 119 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | 3A991.B.2.A | |
| HTS Code | 8542.32.00.41 | |
| Access Time-Max | 2.9 ns | |
| Additional Feature | AUTOMATIC POWER DOWN; SELF-TIMED WRITE CYCLE; INDIVIDUAL BYTE WRITE | |
| Clock Frequency-Max (fCLK) | 227 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-PBGA-B119 | |
| JESD-609 Code | e0 | |
| Length | 22 mm | |
| Memory Density | 4718592 bit | |
| Memory IC Type | STANDARD SRAM | |
| Memory Width | 18 | |
| Number of Functions | 1 | |
| Number of Terminals | 119 | |
| Number of Words | 262144 words | |
| Number of Words Code | 256000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 256KX18 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | BGA | |
| Package Equivalence Code | BGA119,7X17,50 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY | |
| Parallel/Serial | PARALLEL | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 2.4 mm | |
| Standby Current-Max | 0.01 A | |
| Standby Voltage-Min | 3.14 V | |
| Supply Current-Max | 0.575 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3.135 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | BALL | |
| Terminal Pitch | 1.27 mm | |
| Terminal Position | BOTTOM | |
| Width | 14 mm |
Alternate Parts for MT58L256V18PB-4.4
This table gives cross-reference parts and alternative options found for MT58L256V18PB-4.4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT58L256V18PB-4.4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K7I161884B-FC16 | DDR SRAM, 1MX18, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165 | Samsung Semiconductor | MT58L256V18PB-4.4 vs K7I161884B-FC16 |
| AS7C33128NTD36A-200BC | ZBT SRAM, 128KX36, 8.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100 | Alliance Semiconductor Corporation | MT58L256V18PB-4.4 vs AS7C33128NTD36A-200BC |
| CY7C1345B-50AC | Cache SRAM, 128KX36, 11ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | Cypress Semiconductor | MT58L256V18PB-4.4 vs CY7C1345B-50AC |
| CXK77N36R160GB-3 | Late-Write SRAM, 512KX36, 1.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119 | Sony Semiconductor | MT58L256V18PB-4.4 vs CXK77N36R160GB-3 |
| HM6AEB18202BPL50 | 2MX18 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165 | Renesas Electronics Corporation | MT58L256V18PB-4.4 vs HM6AEB18202BPL50 |
| 71V3576YS150BGGI | Cache SRAM, 128KX36, 3.8ns, CMOS, PBGA119, ROHS COMPLIANT, BGA-119 | Integrated Device Technology Inc | MT58L256V18PB-4.4 vs 71V3576YS150BGGI |
| IS61QDPB21M18A-300B4 | QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LFBGA-165 | Integrated Silicon Solution Inc | MT58L256V18PB-4.4 vs IS61QDPB21M18A-300B4 |
| K7Q163682A-FC13 | QDR SRAM, 512KX36, 3ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165 | Samsung Semiconductor | MT58L256V18PB-4.4 vs K7Q163682A-FC13 |
| CY7C1386FV25-250BGI | Cache SRAM, 512KX36, 2.6ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, BGA-119 | Cypress Semiconductor | MT58L256V18PB-4.4 vs CY7C1386FV25-250BGI |
| CY7C1383AV25-100AC | Standard SRAM, 1MX18, 8.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | Cypress Semiconductor | MT58L256V18PB-4.4 vs CY7C1383AV25-100AC |