Part Details for MT8KTF12864AZ-1G6XX by Micron Technology Inc
Overview of MT8KTF12864AZ-1G6XX by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Computing and Data Storage
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| M34571G6-XXXFP#U0 | Renesas Electronics Corporation | 4-bit Microcontrollers with 4 to 16KB Flash, 24 Pins, 6MHz Max Frequency (Non Promotion) | |
| M34571G6-XXXFP#W4 | Renesas Electronics Corporation | 4-bit Microcontrollers with 4 to 16KB Flash, 24 Pins, 6MHz Max Frequency (Non Promotion) |
Part Details for MT8KTF12864AZ-1G6XX
MT8KTF12864AZ-1G6XX CAD Models
MT8KTF12864AZ-1G6XX Part Data Attributes
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MT8KTF12864AZ-1G6XX
Micron Technology Inc
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Datasheet
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MT8KTF12864AZ-1G6XX
Micron Technology Inc
DDR DRAM Module, 128MX64, CMOS, HALOGEN FREE, MO-269R/CA, UDIMM-240
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Part Package Code | DIMM | |
| Package Description | DIMM, | |
| Pin Count | 240 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | SINGLE BANK PAGE BURST | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-XDMA-N240 | |
| JESD-609 Code | e4 | |
| Length | 133.35 mm | |
| Memory Density | 8589934592 bit | |
| Memory IC Type | DDR3 DRAM | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 240 | |
| Number of Words | 134217728 words | |
| Number of Words Code | 128000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 128MX64 | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Seated Height-Max | 30.5 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 1.45 V | |
| Supply Voltage-Min (Vsup) | 1.283 V | |
| Supply Voltage-Nom (Vsup) | 1.35 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | GOLD | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 1 mm | |
| Terminal Position | DUAL |
Alternate Parts for MT8KTF12864AZ-1G6XX
This table gives cross-reference parts and alternative options found for MT8KTF12864AZ-1G6XX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT8KTF12864AZ-1G6XX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| VR5EU286418FBS | DDR DRAM Module, 128MX64, 0.5ns, CMOS, DIMM-240 | Viking Technology | MT8KTF12864AZ-1G6XX vs VR5EU286418FBS |
| EBJ10UE8BAFA-AG-E | DDR DRAM Module, 128MX64, 0.3ns, CMOS, ROHS COMPLIANT, DIMM-240 | Elpida Memory Inc | MT8KTF12864AZ-1G6XX vs EBJ10UE8BAFA-AG-E |
| HYMP512U64AP8-S6 | DDR DRAM Module, 128MX64, 0.4ns, CMOS, ROHS COMPLIANT, DIMM-240 | SK Hynix Inc | MT8KTF12864AZ-1G6XX vs HYMP512U64AP8-S6 |
| HYS64T128020HU-3S-A | DDR DRAM Module, 128MX64, 0.45ns, CMOS, GREEN, DIMM-240 | Infineon Technologies AG | MT8KTF12864AZ-1G6XX vs HYS64T128020HU-3S-A |
| EBE10UE8ACWB-8E-E | DDR DRAM Module, 128MX8, 0.4ns, CMOS, ROHS COMPLIANT,DIMM-240 | Elpida Memory Inc | MT8KTF12864AZ-1G6XX vs EBE10UE8ACWB-8E-E |
| MT8JTF12864AIY-80BXX | DDR DRAM Module, 128MX64, CMOS, LEAD FREE, UDIMM-240 | Micron Technology Inc | MT8KTF12864AZ-1G6XX vs MT8JTF12864AIY-80BXX |
| M2Y1G64TU8HB0B-3C | DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, DIMM-240 | Nanya Technology Corporation | MT8KTF12864AZ-1G6XX vs M2Y1G64TU8HB0B-3C |
| VR5EU286418FBW | DDR DRAM Module, 128MX64, 0.45ns, CMOS, DIMM-240 | Viking Technology | MT8KTF12864AZ-1G6XX vs VR5EU286418FBW |
| HYMT112U64ZNF8-G8 | Synchronous DRAM Module, 128MX64, CMOS, LEAD FREE, DIMM-240 | SK Hynix Inc | MT8KTF12864AZ-1G6XX vs HYMT112U64ZNF8-G8 |
| VR5EU286418FBP | DDR DRAM Module, 128MX64, 0.6ns, CMOS, DIMM-240 | Viking Technology | MT8KTF12864AZ-1G6XX vs VR5EU286418FBP |