Part Details for MT8VDDT1664AG-202 by Micron Technology Inc
Overview of MT8VDDT1664AG-202 by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Computing and Data Storage
Part Details for MT8VDDT1664AG-202
MT8VDDT1664AG-202 CAD Models
MT8VDDT1664AG-202 Part Data Attributes
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MT8VDDT1664AG-202
Micron Technology Inc
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Datasheet
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MT8VDDT1664AG-202
Micron Technology Inc
DDR DRAM Module, 16MX64, 0.8ns, CMOS, PDMA184
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICRON TECHNOLOGY INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.32 | |
Access Time-Max | 0.8 ns | |
Clock Frequency-Max (fCLK) | 125 MHz | |
I/O Type | COMMON | |
JESD-30 Code | R-PDMA-N184 | |
Memory Density | 1073741824 bit | |
Memory IC Type | DDR DRAM MODULE | |
Memory Width | 64 | |
Moisture Sensitivity Level | 1 | |
Number of Terminals | 184 | |
Number of Words | 16777216 words | |
Number of Words Code | 16000000 | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 16MX64 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | DIMM | |
Package Equivalence Code | DIMM184 | |
Package Shape | RECTANGULAR | |
Package Style | MICROELECTRONIC ASSEMBLY | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Standby Current-Max | 0.024 A | |
Supply Current-Max | 2.2 mA | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | NO | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | NO LEAD | |
Terminal Pitch | 1.27 mm | |
Terminal Position | DUAL |
Alternate Parts for MT8VDDT1664AG-202
This table gives cross-reference parts and alternative options found for MT8VDDT1664AG-202. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT8VDDT1664AG-202, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
NT128D64SH4B1G-5T | DDR DRAM Module, 16MX64, 0.65ns, CMOS, DIMM-184 | Nanya Technology Corporation | MT8VDDT1664AG-202 vs NT128D64SH4B1G-5T |
V826616J24SAIZ-A1 | DDR DRAM Module, 16MX64, 0.55ns, CMOS, LEAD FREE, DIMM-184 | ProMOS Technologies Inc | MT8VDDT1664AG-202 vs V826616J24SAIZ-A1 |
M368L1713ETM-LC4 | DDR DRAM Module, 16MX64, 0.65ns, CMOS, DIMM-184 | Samsung Semiconductor | MT8VDDT1664AG-202 vs M368L1713ETM-LC4 |
M368L1714BT1-CA0 | DDR DRAM Module, 16MX64, 0.8ns, CMOS, DIMM-184 | Samsung Semiconductor | MT8VDDT1664AG-202 vs M368L1714BT1-CA0 |
M368L1713ETM-CCC | DDR DRAM Module, 16MX64, 0.65ns, CMOS, DIMM-184 | Samsung Semiconductor | MT8VDDT1664AG-202 vs M368L1713ETM-CCC |
MT4VDDT1664AY-202XX | DDR DRAM Module, 16MX64, 0.8ns, CMOS, MO-206, DIMM-184 | Micron Technology Inc | MT8VDDT1664AG-202 vs MT4VDDT1664AY-202XX |
HYMD116645BL8-H | DDR DRAM Module, 16MX64, 0.75ns, CMOS, 5.250 X 1.250 X 0.150 INCH, DIMM-184 | SK Hynix Inc | MT8VDDT1664AG-202 vs HYMD116645BL8-H |
M368L1713BT0-CA2 | DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | MT8VDDT1664AG-202 vs M368L1713BT0-CA2 |
HYMD216646AL6J-J | DDR DRAM Module, 16MX64, 0.7ns, CMOS, DIMM-184 | SK Hynix Inc | MT8VDDT1664AG-202 vs HYMD216646AL6J-J |
M368L1624DTL-LA2 | DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | MT8VDDT1664AG-202 vs M368L1624DTL-LA2 |