Part Details for MT8VDDT1664AG-202XX by Micron Technology Inc
Overview of MT8VDDT1664AG-202XX by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Computing and Data Storage
Part Details for MT8VDDT1664AG-202XX
MT8VDDT1664AG-202XX CAD Models
MT8VDDT1664AG-202XX Part Data Attributes
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MT8VDDT1664AG-202XX
Micron Technology Inc
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Datasheet
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MT8VDDT1664AG-202XX
Micron Technology Inc
DDR DRAM Module, 16MX64, 0.8ns, CMOS, MO-206, DIMM-184
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Part Package Code | DIMM | |
| Package Description | DIMM, | |
| Pin Count | 184 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.32 | |
| Access Mode | SINGLE BANK PAGE BURST | |
| Access Time-Max | 0.8 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-XDMA-N184 | |
| JESD-609 Code | e0 | |
| Memory Density | 1073741824 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 184 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 16MX64 | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL |
Alternate Parts for MT8VDDT1664AG-202XX
This table gives cross-reference parts and alternative options found for MT8VDDT1664AG-202XX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT8VDDT1664AG-202XX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NT128D64SH4B1G-5T | DDR DRAM Module, 16MX64, 0.65ns, CMOS, DIMM-184 | Nanya Technology Corporation | MT8VDDT1664AG-202XX vs NT128D64SH4B1G-5T |
| V826616J24SAIZ-A1 | DDR DRAM Module, 16MX64, 0.55ns, CMOS, LEAD FREE, DIMM-184 | ProMOS Technologies Inc | MT8VDDT1664AG-202XX vs V826616J24SAIZ-A1 |
| M368L1713ETM-LC4 | DDR DRAM Module, 16MX64, 0.65ns, CMOS, DIMM-184 | Samsung Semiconductor | MT8VDDT1664AG-202XX vs M368L1713ETM-LC4 |
| M368L1714BT1-CA0 | DDR DRAM Module, 16MX64, 0.8ns, CMOS, DIMM-184 | Samsung Semiconductor | MT8VDDT1664AG-202XX vs M368L1714BT1-CA0 |
| M368L1713ETM-CCC | DDR DRAM Module, 16MX64, 0.65ns, CMOS, DIMM-184 | Samsung Semiconductor | MT8VDDT1664AG-202XX vs M368L1713ETM-CCC |
| MT4VDDT1664AY-202XX | DDR DRAM Module, 16MX64, 0.8ns, CMOS, MO-206, DIMM-184 | Micron Technology Inc | MT8VDDT1664AG-202XX vs MT4VDDT1664AY-202XX |
| HYMD116645BL8-H | DDR DRAM Module, 16MX64, 0.75ns, CMOS, 5.250 X 1.250 X 0.150 INCH, DIMM-184 | SK Hynix Inc | MT8VDDT1664AG-202XX vs HYMD116645BL8-H |
| M368L1713BT0-CA2 | DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | MT8VDDT1664AG-202XX vs M368L1713BT0-CA2 |
| HYMD216646AL6J-J | DDR DRAM Module, 16MX64, 0.7ns, CMOS, DIMM-184 | SK Hynix Inc | MT8VDDT1664AG-202XX vs HYMD216646AL6J-J |
| M368L1624DTL-LA2 | DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | MT8VDDT1664AG-202XX vs M368L1624DTL-LA2 |