Part Details for MT9HTF12872RHY-667E1 by Micron Technology Inc
Overview of MT9HTF12872RHY-667E1 by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MT9HTF12872RHY-667E1
MT9HTF12872RHY-667E1 CAD Models
MT9HTF12872RHY-667E1 Part Data Attributes
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MT9HTF12872RHY-667E1
Micron Technology Inc
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Datasheet
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MT9HTF12872RHY-667E1
Micron Technology Inc
DDR DRAM Module, 128MX72, 0.45ns, CMOS, LEAD FREE, MO-274, SORDIMM-200
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICRON TECHNOLOGY INC | |
Part Package Code | SODIMM | |
Package Description | DIMM, DIMM200,24 | |
Pin Count | 200 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.36 | |
Access Mode | SINGLE BANK PAGE BURST | |
Access Time-Max | 0.45 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 333 MHz | |
I/O Type | COMMON | |
JESD-30 Code | R-XDMA-N200 | |
JESD-609 Code | e4 | |
Length | 67.6 mm | |
Memory Density | 9663676416 bit | |
Memory IC Type | DDR DRAM MODULE | |
Memory Width | 72 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 200 | |
Number of Words | 134217728 words | |
Number of Words Code | 128000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 128MX72 | |
Output Characteristics | 3-STATE | |
Package Body Material | UNSPECIFIED | |
Package Code | DIMM | |
Package Equivalence Code | DIMM200,24 | |
Package Shape | RECTANGULAR | |
Package Style | MICROELECTRONIC ASSEMBLY | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Seated Height-Max | 3.8 mm | |
Self Refresh | YES | |
Standby Current-Max | 0.063 A | |
Supply Current-Max | 2.52 mA | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | NO | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | GOLD | |
Terminal Form | NO LEAD | |
Terminal Pitch | 0.6 mm | |
Terminal Position | DUAL | |
Width | 30 mm |
Alternate Parts for MT9HTF12872RHY-667E1
This table gives cross-reference parts and alternative options found for MT9HTF12872RHY-667E1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT9HTF12872RHY-667E1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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W3HG264M72EER403PD4ISG | DDR DRAM Module, 128MX72, 0.6ns, CMOS, ROHS COMPLIANT, SO-RDIMM-200 | Microsemi Corporation | MT9HTF12872RHY-667E1 vs W3HG264M72EER403PD4ISG |
MT18VDDT12872PHY-26AXX | DDR DRAM Module, 128MX72, 0.75ns, CMOS, LEAD FREE, MO-224, SODIMM-200 | Micron Technology Inc | MT9HTF12872RHY-667E1 vs MT18VDDT12872PHY-26AXX |
MT9HTF12872RHZ-80EXX | DDR DRAM Module, 128MX72, CMOS, HALOGEN FREE, SORDIMM-200 | Micron Technology Inc | MT9HTF12872RHY-667E1 vs MT9HTF12872RHZ-80EXX |
WV3HG128M72EEU665PD4SG | DDR DRAM Module, 128MX72, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Microsemi Corporation | MT9HTF12872RHY-667E1 vs WV3HG128M72EEU665PD4SG |
WV3HG264M72EEU534D4MG | DDR DRAM Module, 128MX72, 0.5ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Microsemi Corporation | MT9HTF12872RHY-667E1 vs WV3HG264M72EEU534D4MG |
WV3HG264M72EEU806D4MG | DDR DRAM Module, 128MX72, CMOS, ROHS COMPLIANT, SODIMM-200 | Microsemi Corporation | MT9HTF12872RHY-667E1 vs WV3HG264M72EEU806D4MG |
W3HG264M72EER665PD4ISG | DDR DRAM Module, 128MX72, 0.45ns, CMOS, ROHS COMPLIANT, SO-RDIMM-200 | Microsemi Corporation | MT9HTF12872RHY-667E1 vs W3HG264M72EER665PD4ISG |
MT9HVF12872RHY-40EXX | DDR DRAM Module, 128MX72, CMOS, LEAD FREE, SORDIMM-200 | Micron Technology Inc | MT9HTF12872RHY-667E1 vs MT9HVF12872RHY-40EXX |
MT9VDDT12872HIG-202XX | DDR DRAM Module, 128MX72, 0.8ns, CMOS, SODIMM-200 | Micron Technology Inc | MT9HTF12872RHY-667E1 vs MT9VDDT12872HIG-202XX |
WV3HG264M72EER665PD4IMG | DDR DRAM Module, 128MX72, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Microsemi Corporation | MT9HTF12872RHY-667E1 vs WV3HG264M72EER665PD4IMG |