Datasheets
MT9HTF12872RHZ-80EH1 by: Micron Technology Inc

DRAM, 128MX72, 0.4ns, CMOS, PDMA200

Part Details for MT9HTF12872RHZ-80EH1 by Micron Technology Inc

Overview of MT9HTF12872RHZ-80EH1 by Micron Technology Inc

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Applications Computing and Data Storage

Part Details for MT9HTF12872RHZ-80EH1

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MT9HTF12872RHZ-80EH1 Part Data Attributes

MT9HTF12872RHZ-80EH1 Micron Technology Inc
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MT9HTF12872RHZ-80EH1 Micron Technology Inc DRAM, 128MX72, 0.4ns, CMOS, PDMA200
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Package Description DIMM, DIMM200,24
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.36
Access Time-Max 0.4 ns
Clock Frequency-Max (fCLK) 400 MHz
I/O Type COMMON
JESD-30 Code R-PDMA-N200
Memory Density 9663676416 bit
Memory Width 72
Number of Terminals 200
Number of Words 134217728 words
Number of Words Code 128000000
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 128MX72
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code DIMM
Package Equivalence Code DIMM200,24
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 8192
Standby Current-Max 0.063 A
Supply Current-Max 1.89 mA
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount NO
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form NO LEAD
Terminal Pitch 0.6 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30

Alternate Parts for MT9HTF12872RHZ-80EH1

This table gives cross-reference parts and alternative options found for MT9HTF12872RHZ-80EH1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT9HTF12872RHZ-80EH1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT9HTF12872RHY-800E1 DDR DRAM Module, 128MX72, 0.4ns, CMOS, LEAD FREE, MO-274, SORDIMM-200 Micron Technology Inc MT9HTF12872RHZ-80EH1 vs MT9HTF12872RHY-800E1
Part Number Description Manufacturer Compare
WV3EG2128M72EFSU403AD4-MG DDR DRAM Module, 128MX72, CMOS, ROHS COMPLIANT, SODIMM-200 Microsemi Corporation MT9HTF12872RHZ-80EH1 vs WV3EG2128M72EFSU403AD4-MG
MT9VDDT12872HG-202XX DDR DRAM Module, 128MX72, 0.8ns, CMOS, SODIMM-200 Micron Technology Inc MT9HTF12872RHZ-80EH1 vs MT9VDDT12872HG-202XX
WV3HG128M72EEU665PD4IMG DDR DRAM Module, 128MX72, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200 Microsemi Corporation MT9HTF12872RHZ-80EH1 vs WV3HG128M72EEU665PD4IMG
VR5DR287218EBY DDR DRAM Module, 128MX72, 0.4ns, CMOS, SODIMM-200 Viking Technology MT9HTF12872RHZ-80EH1 vs VR5DR287218EBY
MT9HTF12872RHIY-80EXX DDR DRAM Module, 128MX72, CMOS, LEAD FREE, MO-274, SORDIMM-200 Micron Technology Inc MT9HTF12872RHZ-80EH1 vs MT9HTF12872RHIY-80EXX
W3HG264M72EER534PD4ISG DDR DRAM Module, 128MX72, 0.5ns, CMOS, ROHS COMPLIANT, SO-RDIMM-200 Microsemi Corporation MT9HTF12872RHZ-80EH1 vs W3HG264M72EER534PD4ISG
M485L2829MT0-CA2 DDR DRAM Module, 128MX72, 0.75ns, CMOS, SODIMM-200 Samsung Semiconductor MT9HTF12872RHZ-80EH1 vs M485L2829MT0-CA2
WV3HG264M72EER403PD4ISG DDR DRAM Module, 128MX72, 0.6ns, CMOS, ROHS COMPLIANT, SODIMM-200 Microsemi Corporation MT9HTF12872RHZ-80EH1 vs WV3HG264M72EER403PD4ISG
M485L2829MT0-LA0 DDR DRAM Module, 128MX72, 0.8ns, CMOS, SODIMM-200 Samsung Semiconductor MT9HTF12872RHZ-80EH1 vs M485L2829MT0-LA0
MT9HTF12872RHZ-800XX DDR DRAM Module, 128MX72, CMOS, HALOGEN FREE, SORDIMM-200 Micron Technology Inc MT9HTF12872RHZ-80EH1 vs MT9HTF12872RHZ-800XX

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