There are no models available for this part yet.
Overview of MTA4ATF51264HZ-3G2E1 by Micron Technology Inc
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 2 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 2 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Computing and Data Storage
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| UPC813G2-E1-A | Renesas Electronics Corporation | High Slew Rate, Low Offset Voltage J-FET Input Operational Amplifier | |
| UPC393G2-E1-A | Renesas Electronics Corporation | Comparators, SOP, / | |
| UPC803G2-E1-A | Renesas Electronics Corporation | Operational Amplifiers |
Price & Stock for MTA4ATF51264HZ-3G2E1 by Micron Technology Inc
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
80AH7018
|
Newark | Sdram, Ddr4 Sodimm, 4Gb, 1.6Ghz, Memory Speed:1Mhz, Module Memory:Pc4-3200, Module Form Factor:260-Pin Ddr4 Sdram So-Dimm, Memory Application:Notebook Sodimm, Memory Configuration:512M X 64Bit, Supply Voltage Min:1.14V Rohs Compliant: Yes |Micron MTA4ATF51264HZ-3G2E1 RoHS: Compliant Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now |
CAD Models for MTA4ATF51264HZ-3G2E1 by Micron Technology Inc
Part Data Attributes for MTA4ATF51264HZ-3G2E1 by Micron Technology Inc
|
|
|
|---|---|
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Rohs Code
|
Yes
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|
Part Life Cycle Code
|
Obsolete
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|
Ihs Manufacturer
|
MICRON TECHNOLOGY INC
|
|
Package Description
|
DIMM,
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8542.32.00.36
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|
Date Of Intro
|
2017-05-26
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Samacsys Manufacturer
|
Micron
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Access Mode
|
SINGLE BANK PAGE BURST
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|
Additional Feature
|
WD-MAX
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JESD-30 Code
|
R-XZMA-N260
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Length
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69.6 mm
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Memory Density
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34359738368 bit
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Memory IC Type
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DDR DRAM MODULE
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Memory Width
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64
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Number of Functions
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1
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Number of Ports
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1
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Number of Terminals
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260
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Number of Words
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536870912 words
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Number of Words Code
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512000000
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Operating Mode
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SYNCHRONOUS
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Operating Temperature-Max
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95 °C
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Operating Temperature-Min
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|
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Organization
|
512MX64
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Package Body Material
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UNSPECIFIED
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Package Code
|
DIMM
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Package Shape
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RECTANGULAR
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Package Style
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MICROELECTRONIC ASSEMBLY
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Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
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Seated Height-Max
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30.13 mm
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Supply Voltage-Max (Vsup)
|
1.26 V
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Supply Voltage-Min (Vsup)
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1.14 V
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Supply Voltage-Nom (Vsup)
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1.2 V
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Surface Mount
|
NO
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Technology
|
CMOS
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Temperature Grade
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OTHER
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Terminal Form
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NO LEAD
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Terminal Position
|
ZIG-ZAG
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Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
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Width
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2.5 mm
|
Alternate Parts for MTA4ATF51264HZ-3G2E1
This table gives cross-reference parts and alternative options found for MTA4ATF51264HZ-3G2E1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTA4ATF51264HZ-3G2E1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MTA4ATF51264HZ-3G2J2 | DDR DRAM Module, | Micron Technology Inc | MTA4ATF51264HZ-3G2E1 vs MTA4ATF51264HZ-3G2J2 |
| MTA4ATF51264HZ-3G2R1 | DDR4 DRAM Module, | Micron Technology Inc | MTA4ATF51264HZ-3G2E1 vs MTA4ATF51264HZ-3G2R1 |