Part Details for MTP2N35 by Motorola Mobility LLC
Overview of MTP2N35 by Motorola Mobility LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
Part Details for MTP2N35
MTP2N35 CAD Models
MTP2N35 Part Data Attributes:
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MTP2N35
Motorola Mobility LLC
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Datasheet
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MTP2N35
Motorola Mobility LLC
2A, 350V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MOTOROLA INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | LEADFORM OPTIONS ARE AVAILABLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 350 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 10 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 50 W | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 5 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 65 ns | |
| Turn-on Time-Max (ton) | 35 ns |
Alternate Parts for MTP2N35
This table gives cross-reference parts and alternative options found for MTP2N35. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTP2N35, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF722-010 | Power Field-Effect Transistor, 2.8A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | MTP2N35 vs IRF722-010 |
| UFN720 | Power Field-Effect Transistor, 3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Unitrode Corp (RETIRED) | MTP2N35 vs UFN720 |
| IRF723 | TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,2.8A I(D),TO-220AB | Intersil Corporation | MTP2N35 vs IRF723 |
| BUZ76 | Power Field-Effect Transistor, 2.6A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | TT Electronics Resistors | MTP2N35 vs BUZ76 |
| BUZ76 | 2.6A, 400V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET | TT Electronics Power and Hybrid / Semelab Limited | MTP2N35 vs BUZ76 |
| IRF723-006 | Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | MTP2N35 vs IRF723-006 |
| IRF722 | Power Field-Effect Transistor, 2.8A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | MTP2N35 vs IRF722 |
| MTP3N40 | 3A, 400V, 3.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | MTP2N35 vs MTP3N40 |
| IRF723 | 2.8A, 350V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | MTP2N35 vs IRF723 |
| IRF722-001 | Power Field-Effect Transistor, 2.8A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | MTP2N35 vs IRF722-001 |