Part Details for MTP36N06E by Texas Instruments
Results Overview of MTP36N06E by Texas Instruments
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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MTP36N06E Information
MTP36N06E by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
US Tariff Estimator: MTP36N06E by Texas Instruments
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for MTP36N06E
MTP36N06E Part Data Attributes
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MTP36N06E
Texas Instruments
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Datasheet
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MTP36N06E
Texas Instruments
36A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
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| Part Life Cycle Code | Obsolete | |
| Package Description | Flange Mount, R-Psfm-T3 | |
| Reach Compliance Code | Unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Configuration | Single | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 36 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation Ambient-Max | 100 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Element Material | Silicon |
Alternate Parts for MTP36N06E
This table gives cross-reference parts and alternative options found for MTP36N06E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTP36N06E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MTP36N06V | onsemi | Check for Price | Power Field-Effect Transistor, 32A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | MTP36N06E vs MTP36N06V |
| BUK455-60B | NXP Semiconductors | Check for Price | Power Field-Effect Transistor, 38A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | MTP36N06E vs BUK455-60B |
| AUIRFZ34N | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | MTP36N06E vs AUIRFZ34N |
| BUZ11 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 33A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | MTP36N06E vs BUZ11 |
| IRFZ34N | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 26A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | MTP36N06E vs IRFZ34N |
| BUZ11S2 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | MTP36N06E vs BUZ11S2 |
| AUIRFZ34N | International Rectifier | Check for Price | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | MTP36N06E vs AUIRFZ34N |
| BUZ11 | Advanced Microelectronic Products Inc | Check for Price | Power Field-Effect Transistor, 30A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | MTP36N06E vs BUZ11 |
| BUZ11 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | MTP36N06E vs BUZ11 |
| BUZ11 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | MTP36N06E vs BUZ11 |