Datasheets
NDS336P by:

Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, SUPERSOT-3

Part Details for NDS336P by Fairchild Semiconductor Corporation

Overview of NDS336P by Fairchild Semiconductor Corporation

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Applications Industrial Automation Motor control systems

Price & Stock for NDS336P

Part # Distributor Description Stock Price Buy
Bristol Electronics   3000
RFQ
Bristol Electronics   456
RFQ
Quest Components MOSFET Transistor, P-Channel, SOT-23 2400
  • 1 $0.5600
  • 180 $0.2800
  • 715 $0.2240
$0.2240 / $0.5600 Buy Now
ComSIT USA P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB RoHS: Compliant Europe - 2825
RFQ
Chip 1 Exchange INSTOCK 7975
RFQ
Chip 1 Exchange INSTOCK 5000
RFQ
Win Source Electronics MOSFET P-CH 20V 1.2A SSOT3 30800
  • 145 $0.3500
  • 350 $0.2870
  • 540 $0.2780
  • 745 $0.2690
  • 965 $0.2600
  • 1,290 $0.2330
$0.2330 / $0.3500 Buy Now

Part Details for NDS336P

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NDS336P Part Data Attributes

NDS336P Fairchild Semiconductor Corporation
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NDS336P Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, SUPERSOT-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOT-23
Package Description SUPERSOT-3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 1.2 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 0.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NDS336P

This table gives cross-reference parts and alternative options found for NDS336P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDS336P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
934064761215 Small Signal Field-Effect Transistor Nexperia NDS336P vs 934064761215
PMV160UP Small Signal Field-Effect Transistor Nexperia NDS336P vs PMV160UP
NTR1P02LT1 Single P-Channel Power MOSFET -20V, -1.3A, 220mΩ, SOT-23 (TO-236) 3 LEAD, 3000-REEL onsemi NDS336P vs NTR1P02LT1
PMV160UP,215 PMV160UP - 20 V, 1.2 A P-channel Trench MOSFET@en-us TO-236 3-Pin Nexperia NDS336P vs PMV160UP,215
NVTR01P02LT1G Single P-Channel Power MOSFET -20V, -1.3A, 220mΩ Small Signal MOSFET -20V -1.3A 220 mOhm Single P-Channel SOT-23 Logic Level, SOT-23 (TO-236) 3 LEAD, 3000-REEL, Automotive Qualified onsemi NDS336P vs NVTR01P02LT1G
NTR1P02LT3 1300mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, MINIATURE, CASE 318-08, 3 PIN onsemi NDS336P vs NTR1P02LT3
NTR1P02LT1G Single P-Channel Power MOSFET -20V, -1.3A, 220mΩ, SOT-23 (TO-236) 3 LEAD, 3000-REEL onsemi NDS336P vs NTR1P02LT1G
NTR1P02LT3G Single P-Channel Power MOSFET -20V, -1.3A, 220mΩ, SOT-23 (TO-236) 3 LEAD, 10000-REEL onsemi NDS336P vs NTR1P02LT3G
PMV160UPVL PMV160UP - 20 V, 1.2 A P-channel Trench MOSFET@en-us TO-236 3-Pin Nexperia NDS336P vs PMV160UPVL
Part Number Description Manufacturer Compare
NTR1P02LT1G Single P-Channel Power MOSFET -20V, -1.3A, 220mΩ, SOT-23 (TO-236) 3 LEAD, 3000-REEL onsemi NDS336P vs NTR1P02LT1G
MGSF1P02LT1G TRANSISTOR 750 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, LEAD FREE, CASE 318-08, 3 PIN, FET General Purpose Small Signal onsemi NDS336P vs MGSF1P02LT1G
NTR1P02LT1G 1300mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND LEAD FREE, MINIATURE, CASE 318-08, 3 PIN Rochester Electronics LLC NDS336P vs NTR1P02LT1G
MGSF1P02LT1 750mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, CASE 318-08, 3 PIN onsemi NDS336P vs MGSF1P02LT1
NDS356P Small Signal Field-Effect Transistor, 1.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation NDS336P vs NDS356P
NTR1P02LT3G Single P-Channel Power MOSFET -20V, -1.3A, 220mΩ, SOT-23 (TO-236) 3 LEAD, 10000-REEL onsemi NDS336P vs NTR1P02LT3G
NTR1P02LT3 1300mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, MINIATURE, CASE 318-08, 3 PIN onsemi NDS336P vs NTR1P02LT3
934064761235 Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB Nexperia NDS336P vs 934064761235
PMV160UP,215 PMV160UP - 20 V, 1.2 A P-channel Trench MOSFET@en-us TO-236 3-Pin Nexperia NDS336P vs PMV160UP,215
NTR1P02LT1 1300mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, MINIATURE, CASE 318-08, 3 PIN Rochester Electronics LLC NDS336P vs NTR1P02LT1

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