Part Details for NE32584C-T1 by California Eastern Laboratories (CEL)
Overview of NE32584C-T1 by California Eastern Laboratories (CEL)
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for NE32584C-T1
NE32584C-T1 CAD Models
NE32584C-T1 Part Data Attributes
|
NE32584C-T1
California Eastern Laboratories (CEL)
Buy Now
Datasheet
|
Compare Parts:
NE32584C-T1
California Eastern Laboratories (CEL)
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET
|
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | CALIFORNIA EASTERN LABORATORIES | |
Package Description | DISK BUTTON, O-CRDB-F4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOW NOISE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 4 V | |
Drain Current-Max (ID) | 0.09 A | |
FET Technology | HETERO-JUNCTION | |
Highest Frequency Band | X BAND | |
JESD-30 Code | O-CRDB-F4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | ROUND | |
Package Style | DISK BUTTON | |
Polarity/Channel Type | N-CHANNEL | |
Power Gain-Min (Gp) | 11 dB | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | RADIAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for NE32584C-T1
This table gives cross-reference parts and alternative options found for NE32584C-T1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE32584C-T1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
NE32584C-S | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET | California Eastern Laboratories (CEL) | NE32584C-T1 vs NE32584C-S |
NE32584C-T1 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, METAL CERAMIC, 84C, 4 PIN | NEC Electronics America Inc | NE32584C-T1 vs NE32584C-T1 |
NE32584C-T1 | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET, | NEC Compound Semiconductor Devices Ltd | NE32584C-T1 vs NE32584C-T1 |
NE32584C-T1 | NE32584C-T1 | Renesas Electronics Corporation | NE32584C-T1 vs NE32584C-T1 |
NE32584C-T1A | NE32584C-T1A | Renesas Electronics Corporation | NE32584C-T1 vs NE32584C-T1A |
NE32584C-S | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, METAL CERAMIC, 84C, 4 PIN | NEC Compound Semiconductor Devices Ltd | NE32584C-T1 vs NE32584C-S |
NE32584C-T1A | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET, | NEC Compound Semiconductor Devices Ltd | NE32584C-T1 vs NE32584C-T1A |