Part Details for NE722S01-A by NEC Electronics Group
Overview of NE722S01-A by NEC Electronics Group
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
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Part Details for NE722S01-A
NE722S01-A CAD Models
NE722S01-A Part Data Attributes
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NE722S01-A
NEC Electronics Group
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Datasheet
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NE722S01-A
NEC Electronics Group
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, S01, 4 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NEC ELECTRONICS CORP | |
Package Description | MICROWAVE, X-PXMW-G4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | LOW NOISE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 4 V | |
Drain Current-Max (ID) | 0.04 A | |
FET Technology | METAL SEMICONDUCTOR | |
Highest Frequency Band | X BAND | |
JESD-30 Code | X-PXMW-G4 | |
JESD-609 Code | e6 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | DEPLETION MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | UNSPECIFIED | |
Package Style | MICROWAVE | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN BISMUTH | |
Terminal Form | GULL WING | |
Terminal Position | UNSPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for NE722S01-A
This table gives cross-reference parts and alternative options found for NE722S01-A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE722S01-A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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NE76118-K | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, SUPER MINIMOLD PACKAGE-4 | NEC Electronics Group | NE722S01-A vs NE76118-K |
NE434S01-T1 | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, Hetero-junction FET | NEC Electronics Group | NE722S01-A vs NE434S01-T1 |
NE72218-57 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | NEC Electronics Group | NE722S01-A vs NE72218-57 |
NE425S01-T1B | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET | NEC Electronics Group | NE722S01-A vs NE425S01-T1B |
NE434S01-T1B | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, Hetero-junction FET | NEC Electronics Group | NE722S01-A vs NE434S01-T1B |
NE72218-T2-58 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | NEC Electronics Group | NE722S01-A vs NE72218-T2-58 |
FHX13LP | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4 | FUJITSU Limited | NE722S01-A vs FHX13LP |
NE72218-T1-57 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | NEC Electronics Group | NE722S01-A vs NE72218-T1-57 |
NE72218-T1-58 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | NEC Electronics Group | NE722S01-A vs NE72218-T1-58 |
NE425S01-T1 | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET | NEC Electronics Group | NE722S01-A vs NE425S01-T1 |