Part Details for NT2GT72U4NB1BN-3C by Nanya Technology Corporation
Overview of NT2GT72U4NB1BN-3C by Nanya Technology Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Computing and Data Storage
Part Details for NT2GT72U4NB1BN-3C
NT2GT72U4NB1BN-3C CAD Models
NT2GT72U4NB1BN-3C Part Data Attributes:
|
|
NT2GT72U4NB1BN-3C
Nanya Technology Corporation
Buy Now
Datasheet
|
Compare Parts:
NT2GT72U4NB1BN-3C
Nanya Technology Corporation
DDR DRAM Module, 256MX72, 0.45ns, CMOS, ROHS COMPLIANT, DIMM-240
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NANYA TECHNOLOGY CORP | |
| Part Package Code | DIMM | |
| Package Description | DIMM, DIMM240,40 | |
| Pin Count | 240 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 0.45 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 333 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-XDMA-N240 | |
| JESD-609 Code | e4 | |
| Memory Density | 19327352832 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 72 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 240 | |
| Number of Words | 268435456 words | |
| Number of Words Code | 256000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | ||
| Organization | 256MX72 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM240,40 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Self Refresh | YES | |
| Supply Current-Max | 5.2 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 1 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Alternate Parts for NT2GT72U4NB1BN-3C
This table gives cross-reference parts and alternative options found for NT2GT72U4NB1BN-3C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NT2GT72U4NB1BN-3C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| EBE21FD4AJFT-6E-E | DDR DRAM Module, 256MX72, CMOS, ROHS COMPLIANT, FBDIMM-240 | Elpida Memory Inc | NT2GT72U4NB1BN-3C vs EBE21FD4AJFT-6E-E |
| M395T5750EZ4-CE67 | DDR DRAM Module, 256MX72, CMOS, ROHS COMPLIANT, DIMM-240 | Samsung Semiconductor | NT2GT72U4NB1BN-3C vs M395T5750EZ4-CE67 |
| M395T5663FB4-CE68 | DDR DRAM, 256MX72, CMOS, HALOGEN FREE AND ROHS COMPLIANT, SODIMM-204 | Samsung Semiconductor | NT2GT72U4NB1BN-3C vs M395T5663FB4-CE68 |
| M395T5663CZ4-CE66 | DDR DRAM Module, 256MX72, CMOS, ROHS COMPLIANT, FBDIMM-240 | Samsung Semiconductor | NT2GT72U4NB1BN-3C vs M395T5663CZ4-CE66 |
| HYMP125F72CP8N3-Y5 | DDR DRAM, 256MX72, CMOS, ROHS COMPLIANT, DIMM-240 | SK Hynix Inc | NT2GT72U4NB1BN-3C vs HYMP125F72CP8N3-Y5 |
| M395T5750GZ4-CE63 | DDR DRAM Module, 256MX72, CMOS, HALOGEN FREE AND ROHS COMPLIANT, DIMM-240 | Samsung Semiconductor | NT2GT72U4NB1BN-3C vs M395T5750GZ4-CE63 |
| M395T5750GZ4-CE65 | DDR DRAM Module, 256MX72, CMOS, HALOGEN FREE AND ROHS COMPLIANT, DIMM-240 | Samsung Semiconductor | NT2GT72U4NB1BN-3C vs M395T5750GZ4-CE65 |
| EBE21FE8ACWT-6E-E | DDR DRAM Module, 512MX72, CMOS, ROHS COMPLIANT, FBDIMM-240 | Elpida Memory Inc | NT2GT72U4NB1BN-3C vs EBE21FE8ACWT-6E-E |
| M395T5663QZ4-CE69 | DDR DRAM Module, 256MX72, CMOS, HALOGEN FREE AND ROHS COMPLIANT, DIMM-240 | Samsung Semiconductor | NT2GT72U4NB1BN-3C vs M395T5663QZ4-CE69 |
| EBE21FE8ACWR-6E-E | DDR DRAM Module, 256MX8, CMOS, ROHS COMPLIANT, DIMM-240 | Elpida Memory Inc | NT2GT72U4NB1BN-3C vs EBE21FE8ACWR-6E-E |