Part Details for NT512T64U88B0BY-25C by Nanya Technology Corporation
Overview of NT512T64U88B0BY-25C by Nanya Technology Corporation
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- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
Part Details for NT512T64U88B0BY-25C
NT512T64U88B0BY-25C CAD Models
NT512T64U88B0BY-25C Part Data Attributes
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NT512T64U88B0BY-25C
Nanya Technology Corporation
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Datasheet
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NT512T64U88B0BY-25C
Nanya Technology Corporation
DDR DRAM Module, 64MX64, 0.5ns, CMOS, ROHS COMPLIANT, DIMM-240
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NANYA TECHNOLOGY CORP | |
Part Package Code | DIMM | |
Package Description | DIMM, DIMM240,40 | |
Pin Count | 240 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.36 | |
Access Mode | SINGLE BANK PAGE BURST | |
Access Time-Max | 0.5 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 400 MHz | |
I/O Type | COMMON | |
JESD-30 Code | R-XDMA-N240 | |
Memory Density | 4294967296 bit | |
Memory IC Type | DDR DRAM MODULE | |
Memory Width | 64 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 240 | |
Number of Words | 67108864 words | |
Number of Words Code | 64000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | ||
Organization | 64MX64 | |
Output Characteristics | 3-STATE | |
Package Body Material | UNSPECIFIED | |
Package Code | DIMM | |
Package Equivalence Code | DIMM240,40 | |
Package Shape | RECTANGULAR | |
Package Style | MICROELECTRONIC ASSEMBLY | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Self Refresh | YES | |
Standby Current-Max | 0.056 A | |
Supply Current-Max | 1.4 mA | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | NO | |
Technology | CMOS | |
Temperature Grade | OTHER | |
Terminal Form | NO LEAD | |
Terminal Pitch | 1 mm | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Alternate Parts for NT512T64U88B0BY-25C
This table gives cross-reference parts and alternative options found for NT512T64U88B0BY-25C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NT512T64U88B0BY-25C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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M378T6453FZ3-CCC | DDR DRAM Module, 64MX64, 0.6ns, CMOS, ROHS COMPLIANT, DIMM-240 | Samsung Semiconductor | NT512T64U88B0BY-25C vs M378T6453FZ3-CCC |
HYS64T64000GU-3.7-A | DDR DRAM Module, 64MX64, 0.5ns, CMOS, DIMM-240 | Infineon Technologies AG | NT512T64U88B0BY-25C vs HYS64T64000GU-3.7-A |
M378T6464EHS-CE6 | DDR DRAM Module, 64MX64, 0.45ns, CMOS, HALOGEN FREE AND ROHS COMPLIANT, UDIMM-240 | Samsung Semiconductor | NT512T64U88B0BY-25C vs M378T6464EHS-CE6 |
MT4HTF6464AZ-1GAH1 | DDR DRAM Module, 64MX64, CMOS, HALOGEN FREE, UDIMM-240 | Micron Technology Inc | NT512T64U88B0BY-25C vs MT4HTF6464AZ-1GAH1 |
M378T6553CZ0-CF7 | DDR DRAM Module, 64MX64, 0.4ns, CMOS, ROHS COMPLIANT, DIMM-240 | Samsung Semiconductor | NT512T64U88B0BY-25C vs M378T6553CZ0-CF7 |
V916764K24QCFW-F5 | DDR DRAM Module, 64MX64, 0.45ns, CMOS, ROHS COMPLIANT, DIMM-240 | ProMOS Technologies Inc | NT512T64U88B0BY-25C vs V916764K24QCFW-F5 |
HYMP164U64CR6-C4 | DDR DRAM, 64MX64, 0.5ns, CMOS, ROHS COMPLIANT, DIMM-240 | SK Hynix Inc | NT512T64U88B0BY-25C vs HYMP164U64CR6-C4 |
HYS64T64400HU-3S-B | DDR DRAM Module, 64MX64, 0.45ns, CMOS, GREEN, UDIMM-240 | Qimonda AG | NT512T64U88B0BY-25C vs HYS64T64400HU-3S-B |
M378T6553CZ0-CD6 | DDR DRAM Module, 64MX64, 0.45ns, CMOS, ROHS COMPLIANT, DIMM-240 | Samsung Semiconductor | NT512T64U88B0BY-25C vs M378T6553CZ0-CD6 |
MT4HTF6464AIZ-800XX | DDR DRAM Module, 64MX64, CMOS, HALOGEN FREE, UDIMM-240 | Micron Technology Inc | NT512T64U88B0BY-25C vs MT4HTF6464AIZ-800XX |