Part Details for NT5DS32M16AF-75B by Nanya Technology Corporation
Overview of NT5DS32M16AF-75B by Nanya Technology Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Consumer Electronics
Education and Research
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for NT5DS32M16AF-75B
NT5DS32M16AF-75B CAD Models
NT5DS32M16AF-75B Part Data Attributes
|
NT5DS32M16AF-75B
Nanya Technology Corporation
Buy Now
Datasheet
|
Compare Parts:
NT5DS32M16AF-75B
Nanya Technology Corporation
DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, BGA-60
|
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NANYA TECHNOLOGY CORP | |
Part Package Code | BGA | |
Package Description | BGA, BGA60,9X12,40/32 | |
Pin Count | 60 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.28 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 0.75 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 133 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 2,4,8 | |
JESD-30 Code | S-PBGA-B60 | |
Length | 12.5 mm | |
Memory Density | 536870912 bit | |
Memory IC Type | DDR1 DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 60 | |
Number of Words | 33554432 words | |
Number of Words Code | 32000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 32MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | BGA | |
Package Equivalence Code | BGA60,9X12,40/32 | |
Package Shape | SQUARE | |
Package Style | GRID ARRAY | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Seated Height-Max | 1.15 mm | |
Self Refresh | YES | |
Sequential Burst Length | 2,4,8 | |
Standby Current-Max | 0.018 A | |
Supply Voltage-Max (Vsup) | 2.7 V | |
Supply Voltage-Min (Vsup) | 2.3 V | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | BALL | |
Terminal Pitch | 1 mm | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Width | 12.5 mm |
Alternate Parts for NT5DS32M16AF-75B
This table gives cross-reference parts and alternative options found for NT5DS32M16AF-75B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NT5DS32M16AF-75B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
V58C2512164SDUJ4I | DDR DRAM, 32MX16, CMOS, PBGA60, GREEN, MO-207, FBGA-60 | ProMOS Technologies Inc | NT5DS32M16AF-75B vs V58C2512164SDUJ4I |
MT47H32M16CB-3ELIT:B | DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA60, 12 X 10 MM, ROHS COMPLIANT, FBGA-60 | Micron Technology Inc | NT5DS32M16AF-75B vs MT47H32M16CB-3ELIT:B |
HY5DU121622DFP-KI | DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | SK Hynix Inc | NT5DS32M16AF-75B vs HY5DU121622DFP-KI |
V58C2512164SBLS6 | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, MO-207, FBGA-60 | ProMOS Technologies Inc | NT5DS32M16AF-75B vs V58C2512164SBLS6 |
MT46HC32M16LFBF-54L:B | DDR DRAM, 32MX16, 5.4ns, CMOS, PBGA60, 8 X 9 MM, GREEN, PLASTIC, VFBGA-60 | Micron Technology Inc | NT5DS32M16AF-75B vs MT46HC32M16LFBF-54L:B |
NT5DS32M16BF-5TI | DDR DRAM, 32MX16, 0.65ns, CMOS, PBGA60, 1 MM PITCH, WBGA-60 | Nanya Technology Corporation | NT5DS32M16AF-75B vs NT5DS32M16BF-5TI |
MT46V32M16FN-5BIT:C | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, FBGA-60 | Micron Technology Inc | NT5DS32M16AF-75B vs MT46V32M16FN-5BIT:C |
V58C2512164SDLJ5DI | DDR DRAM, 32MX16, CMOS, PBGA60, GREEN, MO-207, FBGA-60 | ProMOS Technologies Inc | NT5DS32M16AF-75B vs V58C2512164SDLJ5DI |
V58C512164SBS-5 | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, MO-027, FBGA-60 | ProMOS Technologies Inc | NT5DS32M16AF-75B vs V58C512164SBS-5 |
HYB25D512160BF-6 | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60 | Qimonda AG | NT5DS32M16AF-75B vs HYB25D512160BF-6 |