Memory
NT5SV16M16BS-6K
Nanya Technology Corporation
Description: Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 INCH, LEAD AND HALOGEN FREE, PLASTIC, TSOP2-54

Overview of NT5SV16M16BS-6K by Nanya Technology Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Computing and Data Storage

Price & Stock for NT5SV16M16BS-6K by Nanya Technology Corporation

Part # Manufacturer Description Stock Price Buy
Quest Components IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC 96
  • 1 $22.4000
  • 24 $20.1600
  • 51 $19.0400
$19.0400 / $22.4000 Buy Now

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Part Data Attributes for NT5SV16M16BS-6K by Nanya Technology Corporation

NT5SV16M16BS-6K
Nanya Technology Corporation
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
NANYA TECHNOLOGY CORP
Part Package Code
TSOP2
Package Description
TSOP2, TSOP54,.46,32
Pin Count
54
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.24
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
5 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
167 MHz
I/O Type
COMMON
Interleaved Burst Length
1,2,4,8
JESD-30 Code
R-PDSO-G54
Length
22.22 mm
Memory Density
268435456 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
54
Number of Words
16777216 words
Number of Words Code
16000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
16MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TSOP2
Package Equivalence Code
TSOP54,.46,32
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Qualification Status
Not Qualified
Refresh Cycles
8192
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
1,2,4,8
Standby Current-Max
0.002 A
Supply Current-Max
0.21 mA
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
GULL WING
Terminal Pitch
0.8 mm
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
10.16 mm
Want to compare parts?
  1. NT5SV16M16BS-6K
    Nanya Technology Corporation
    Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 INCH, LEAD AND HALOGEN FREE, PLASTIC, TSOP2-54
    VS

Alternate Parts for NT5SV16M16BS-6K

This table gives cross-reference parts and alternative options found for NT5SV16M16BS-6K. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NT5SV16M16BS-6K, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
NT5SV16M16BT-6K Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Nanya Technology Corporation NT5SV16M16BS-6K vs NT5SV16M16BT-6K
Part Number Description Manufacturer Compare
K4S561632D-TC60 Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor NT5SV16M16BS-6K vs K4S561632D-TC60
K4S561632C-TC60 Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor NT5SV16M16BS-6K vs K4S561632C-TC60
K4S561632C-TL60 Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor NT5SV16M16BS-6K vs K4S561632C-TL60
HYB39S256160DF-6 Synchronous DRAM, 16MX16, 5ns, CMOS, PBGA54, 12 X 8 MM, PLASTIC, TFBGA-54 Infineon Technologies AG NT5SV16M16BS-6K vs HYB39S256160DF-6
NT5SV16M16BT-6K Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Nanya Technology Corporation NT5SV16M16BS-6K vs NT5SV16M16BT-6K
K4S561632N-LC600 Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54 Samsung Semiconductor NT5SV16M16BS-6K vs K4S561632N-LC600
W9825G6DH-6C DDR DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 Winbond Electronics Corp NT5SV16M16BS-6K vs W9825G6DH-6C
K4S561632E-TC600 Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor NT5SV16M16BS-6K vs K4S561632E-TC600
IS42S16160A-6T Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 Integrated Silicon Solution Inc NT5SV16M16BS-6K vs IS42S16160A-6T
K4S561632E-TL600 Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor NT5SV16M16BS-6K vs K4S561632E-TL600

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