Memory
NT5TU32M16AF-3CI
Nanya Technology Corporation
Description: DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, 0.80 MM PITCH, BGA-84

Overview of NT5TU32M16AF-3CI by Nanya Technology Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 10 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Computing and Data Storage

CAD Models for NT5TU32M16AF-3CI by Nanya Technology Corporation
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Part Data Attributes for NT5TU32M16AF-3CI by Nanya Technology Corporation

NT5TU32M16AF-3CI
Nanya Technology Corporation
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
NANYA TECHNOLOGY CORP
Part Package Code
BGA
Package Description
TFBGA, BGA84,9X15,32
Pin Count
84
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.28
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
0.45 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
333 MHz
I/O Type
COMMON
Interleaved Burst Length
4,8
JESD-30 Code
R-PBGA-B84
Length
12.5 mm
Memory Density
536870912 bit
Memory IC Type
DDR2 DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
84
Number of Words
33554432 words
Number of Words Code
32000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Organization
32MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TFBGA
Package Equivalence Code
BGA84,9X15,32
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status
Not Qualified
Refresh Cycles
8192
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
4,8
Standby Current-Max
0.005 A
Supply Current-Max
0.24 mA
Supply Voltage-Max (Vsup)
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Width
10 mm
Want to compare parts?
  1. NT5TU32M16AF-3CI
    Nanya Technology Corporation
    DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, 0.80 MM PITCH, BGA-84
    VS

Alternate Parts for NT5TU32M16AF-3CI

This table gives cross-reference parts and alternative options found for NT5TU32M16AF-3CI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NT5TU32M16AF-3CI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MT47H32M16HW-25EAAT:G DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, FBGA-84 Micron Technology Inc NT5TU32M16AF-3CI vs MT47H32M16HW-25EAAT:G
MT47H32M16HW-3ELIT:F DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, FBGA-84 Micron Technology Inc NT5TU32M16AF-3CI vs MT47H32M16HW-3ELIT:F
HYB18T512160AF-3S DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 Qimonda AG NT5TU32M16AF-3CI vs HYB18T512160AF-3S
NT5TU32M16CF-3CI DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT,BGA-84 Nanya Technology Corporation NT5TU32M16AF-3CI vs NT5TU32M16CF-3CI
MT47H32M16HW-3LIT:F DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, FBGA-84 Micron Technology Inc NT5TU32M16AF-3CI vs MT47H32M16HW-3LIT:F
MT47H32M16BN-3EL DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84 Micron Technology Inc NT5TU32M16AF-3CI vs MT47H32M16BN-3EL
MT47H32M16HW-3:F DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, FBGA-84 Micron Technology Inc NT5TU32M16AF-3CI vs MT47H32M16HW-3:F
MT47H32M16GC-3EL:B DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, 12 X 12.50 MM, FBGA-84 Micron Technology Inc NT5TU32M16AF-3CI vs MT47H32M16GC-3EL:B
MT47H32M16GC-3L:B DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, 12 X 12.50 MM, FBGA-84 Micron Technology Inc NT5TU32M16AF-3CI vs MT47H32M16GC-3L:B
MT47H32M16CC-3IT DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84 Micron Technology Inc NT5TU32M16AF-3CI vs MT47H32M16CC-3IT

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