Datasheets
NTD2955-1G by:

12A, 60V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 369D-01, DPAK-3

Part Details for NTD2955-1G by Rochester Electronics LLC

Overview of NTD2955-1G by Rochester Electronics LLC

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Part Details for NTD2955-1G

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NTD2955-1G Part Data Attributes

NTD2955-1G Rochester Electronics LLC
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NTD2955-1G Rochester Electronics LLC 12A, 60V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 369D-01, DPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Package Description ROHS COMPLIANT, CASE 369D-01, DPAK-3
Pin Count 3
Manufacturer Package Code CASE 369D-01
Reach Compliance Code unknown
Avalanche Energy Rating (Eas) 216 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 36 A
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NTD2955-1G

This table gives cross-reference parts and alternative options found for NTD2955-1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTD2955-1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NTD2955G Single P-Channel Power MOSFET -60V, -12A, 180mΩ, DPAK (SINGLE GAUGE) TO-252, 75-TUBE onsemi NTD2955-1G vs NTD2955G
NVD2955T4G Power MOSFET -60V, -12A, 180 mOhm, Single P-Channel, DPAK. Power MOSFET -60V -12A 180 mOhm Single P-Channel DPAK, DPAK (SINGLE GAUGE) TO-252, 2500-REEL, Automotive Qualified onsemi NTD2955-1G vs NVD2955T4G
NTD2955G 12A, 60V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 369C-01, DPAK-3 Rochester Electronics LLC NTD2955-1G vs NTD2955G
NTD2955T4 12A, 60V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 onsemi NTD2955-1G vs NTD2955T4
NTD2955 12A, 60V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 onsemi NTD2955-1G vs NTD2955
Part Number Description Manufacturer Compare
FQA7N90 7.4A, 900V, 1.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN Rochester Electronics LLC NTD2955-1G vs FQA7N90
SSF45N20A Power Field-Effect Transistor, 26.4A I(D), 200V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN Samsung Semiconductor NTD2955-1G vs SSF45N20A
FQP5N40 4.5A, 400V, 1.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC NTD2955-1G vs FQP5N40
IRF450PBF Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN International Rectifier NTD2955-1G vs IRF450PBF
IRFBC40R 6.2A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC NTD2955-1G vs IRFBC40R
IRF822R 2A, 500V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC NTD2955-1G vs IRF822R
SPP10N10 10.3A, 100V, 0.17ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN Rochester Electronics LLC NTD2955-1G vs SPP10N10
SSP6N80A Power Field-Effect Transistor, 6A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor NTD2955-1G vs SSP6N80A
SUB70N03-09BP Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix NTD2955-1G vs SUB70N03-09BP
FQPF7N10 5.5A, 100V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN Rochester Electronics LLC NTD2955-1G vs FQPF7N10

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