Part Details for P6SMB9.1CAHR4G by Taiwan Semiconductor
Overview of P6SMB9.1CAHR4G by Taiwan Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for P6SMB9.1CAHR4G
P6SMB9.1CAHR4G CAD Models
P6SMB9.1CAHR4G Part Data Attributes
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P6SMB9.1CAHR4G
Taiwan Semiconductor
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Datasheet
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P6SMB9.1CAHR4G
Taiwan Semiconductor
Trans Voltage Suppressor Diode, 600W, 7.78V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TAIWAN SEMICONDUCTOR CO LTD | |
Package Description | SMB, 2 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.50 | |
Additional Feature | EXCELLENT CLAMPING CAPABILITY | |
Breakdown Voltage-Max | 9.55 V | |
Breakdown Voltage-Min | 8.65 V | |
Breakdown Voltage-Nom | 9.1 V | |
Clamping Voltage-Max | 13.4 V | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE | |
JEDEC-95 Code | DO-214AA | |
JESD-30 Code | R-PDSO-C2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Non-rep Peak Rev Power Dis-Max | 600 W | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity | BIDIRECTIONAL | |
Power Dissipation-Max | 3 W | |
Reference Standard | AEC-Q101 | |
Rep Pk Reverse Voltage-Max | 7.78 V | |
Surface Mount | YES | |
Technology | AVALANCHE | |
Terminal Finish | MATTE TIN | |
Terminal Form | C BEND | |
Terminal Position | DUAL |
Alternate Parts for P6SMB9.1CAHR4G
This table gives cross-reference parts and alternative options found for P6SMB9.1CAHR4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of P6SMB9.1CAHR4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SMBJ7.5CA | Trans Voltage Suppressor Diode, 600W, 7.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN | Daco Semiconductor Co Ltd | P6SMB9.1CAHR4G vs SMBJ7.5CA |
MSMBJ8.0CA/TR | Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA | Microchip Technology Inc | P6SMB9.1CAHR4G vs MSMBJ8.0CA/TR |
SMBJ8.0CA | Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN | Fairchild Semiconductor Corporation | P6SMB9.1CAHR4G vs SMBJ8.0CA |
SMBJ7.5CA | Trans Voltage Suppressor Diode, 7.5V V(RWM), Bidirectional | Bytesonic Corporation | P6SMB9.1CAHR4G vs SMBJ7.5CA |
SMBJ7.5CAHR4 | Trans Voltage Suppressor Diode, 600W, 7.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN | Taiwan Semiconductor | P6SMB9.1CAHR4G vs SMBJ7.5CAHR4 |
SMBJ8.0CA | Transient Suppressor | MDE Semiconductor Inc | P6SMB9.1CAHR4G vs SMBJ8.0CA |
SMBJ7.5CA | Trans Voltage Suppressor Diode, 7.5V V(RWM), Bidirectional, | DB Lectro Inc | P6SMB9.1CAHR4G vs SMBJ7.5CA |
MSMBJ8.0CAE3/TR | Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA | Microchip Technology Inc | P6SMB9.1CAHR4G vs MSMBJ8.0CAE3/TR |
SMBJ7.5CA | Surface Mount TVS Diode; Direction: Bidirectional; V(BR) Typ (V): 8.33V; PPK Max (W): 600W; Condition: 10×1000us; VRWM Max (V): 7.5V; VBR Min (V): 8.33V; VBR Max (V): 9.21V; IR Max (uA): 100uA; VC Max (V): 12.9V; Package: SMB | Galaxy Microelectronics | P6SMB9.1CAHR4G vs SMBJ7.5CA |
SMBJ8.0CA | Transient Suppressor, | DB Lectro Inc | P6SMB9.1CAHR4G vs SMBJ8.0CA |