Datasheets
PD55003L by: STMicroelectronics

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Part Details for PD55003L by STMicroelectronics

Results Overview of PD55003L by STMicroelectronics

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PD55003L Information

PD55003L by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for PD55003L

Part # Distributor Description Stock Price Buy
Vyrian Transistors 7112
RFQ

Part Details for PD55003L

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PD55003L Part Data Attributes

PD55003L STMicroelectronics
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PD55003L STMicroelectronics RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Rohs Code No
Part Life Cycle Code Obsolete
Package Description 5 X 5 Mm, Leadless, Plastic, Smd, Powerflat-5
Pin Count 5
Reach Compliance Code Compliant
ECCN Code EAR99
Additional Feature High Reliability
Case Connection Source
Configuration Single
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 2.5 A
FET Technology Metal-Oxide Semiconductor
Highest Frequency Band Ultra High Frequency Band
JESD-30 Code S-PQCC-N5
JESD-609 Code e0
Number of Elements 1
Number of Terminals 5
Operating Mode Enhancement Mode
Operating Temperature-Max 150 °C
Package Body Material Plastic/Epoxy
Package Shape Square
Package Style Chip Carrier
Polarity/Channel Type N-Channel
Power Dissipation-Max (Abs) 26.6 W
Qualification Status Not Qualified
Surface Mount Yes
Terminal Finish Tin Lead
Terminal Form No Lead
Terminal Position Quad
Transistor Application Amplifier
Transistor Element Material Silicon

Alternate Parts for PD55003L

This table gives cross-reference parts and alternative options found for PD55003L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PD55003L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
PD55003-E STMicroelectronics $7.0278 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET PD55003L vs PD55003-E
PD55003STR-E STMicroelectronics Check for Price RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET PD55003L vs PD55003STR-E
PD55003L-E STMicroelectronics Check for Price RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET PD55003L vs PD55003L-E
PD55003-01 STMicroelectronics Check for Price RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET PD55003L vs PD55003-01
equivalents icon

PD55003L Related Parts

PD55003L Frequently Asked Questions (FAQ)

  • STMicroelectronics provides a recommended PCB layout in the application note AN5323, which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and minimize electromagnetic interference (EMI).

  • The input capacitor values depend on the input voltage, output voltage, and desired output ripple. A general guideline is to use a minimum of 10uF ceramic capacitors with a voltage rating of at least 1.5 times the input voltage. However, it's recommended to consult the application note AN5323 for more detailed guidance on capacitor selection.

  • While the datasheet specifies an operating temperature range of -40°C to 150°C, the maximum ambient temperature for reliable operation is typically considered to be around 125°C. Above this temperature, the device's performance and reliability may be compromised.

  • To ensure proper power-up and power-down sequencing, it's recommended to follow the guidelines in the application note AN5323. This includes using a soft-start circuit, controlling the input voltage rise time, and ensuring the output voltage is stable before enabling the device.

  • To minimize EMI, it's essential to use a combination of filtering and shielding techniques. This includes using ferrite beads, capacitors, and resistors to filter the input and output signals, as well as shielding the device and PCB with a metal enclosure or shielded cables.

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