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PD55003STR-E by: STMicroelectronics

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Part Details for PD55003STR-E by STMicroelectronics

Results Overview of PD55003STR-E by STMicroelectronics

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

PD55003STR-E Information

PD55003STR-E by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for PD55003STR-E

Part # Distributor Description Stock Price Buy
Vyrian Transistors 6405
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Part Details for PD55003STR-E

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PD55003STR-E Part Data Attributes

PD55003STR-E STMicroelectronics
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PD55003STR-E STMicroelectronics RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Part Package Code SOT
Package Description Rohs Compliant, Plastic, Powerso-10rf, 2 Pin
Pin Count 10
Reach Compliance Code Not Compliant
ECCN Code EAR99
Additional Feature High Reliability
Case Connection Source
Configuration Single
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 2.5 A
FET Technology Metal-Oxide Semiconductor
Highest Frequency Band Ultra High Frequency Band
JESD-30 Code R-PDSO-F2
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 2
Operating Mode Enhancement Mode
Operating Temperature-Max 165 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Small Outline
Polarity/Channel Type N-Channel
Power Dissipation-Max (Abs) 31.7 W
Qualification Status Not Qualified
Surface Mount Yes
Terminal Finish Matte Tin
Terminal Form Flat
Terminal Position Dual
Transistor Application Amplifier
Transistor Element Material Silicon

Alternate Parts for PD55003STR-E

This table gives cross-reference parts and alternative options found for PD55003STR-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PD55003STR-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
PD55003-E STMicroelectronics $7.0278 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET PD55003STR-E vs PD55003-E
PD55003L-E STMicroelectronics Check for Price RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET PD55003STR-E vs PD55003L-E
PD55003-01 STMicroelectronics Check for Price RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET PD55003STR-E vs PD55003-01
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PD55003STR-E Related Parts

PD55003STR-E Frequently Asked Questions (FAQ)

  • STMicroelectronics provides a recommended PCB layout in the application note AN5323, which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and minimize electromagnetic interference (EMI).

  • The input capacitor values depend on the input voltage, output voltage, and output current. A general guideline is to use a minimum of 10uF ceramic capacitor with a voltage rating of at least 1.5 times the input voltage. However, it's recommended to consult the application note AN5323 and perform simulations to determine the optimal capacitor values for your specific design.

  • The PD55003STR-E is rated for operation up to 105°C ambient temperature, but it's recommended to derate the output current and voltage according to the thermal derating curve provided in the datasheet to ensure reliable operation.

  • The PD55003STR-E has built-in OVP and UVP, but it's recommended to add external circuitry to enhance protection. A simple OVP circuit can be implemented using a zener diode and a resistor, while UVP can be achieved using a voltage supervisor IC. Consult the application note AN5323 for more details.

  • The output capacitor value and type depend on the output voltage and current. A general guideline is to use a minimum of 22uF ceramic capacitor with a voltage rating of at least 1.5 times the output voltage. However, it's recommended to consult the application note AN5323 and perform simulations to determine the optimal capacitor values for your specific design.

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