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Transistors / RF Power Field-Effect Transistors / PD57018-E
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PD57018-E by:
STMicroelectronics

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Part Details for PD57018-E by STMicroelectronics

Results Overview of PD57018-E by STMicroelectronics

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Applications Energy and Power Systems Renewable Energy Automotive

PD57018-E Information

PD57018-E by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for PD57018-E

Part # Distributor Description Stock Price Buy
DISTI # 497-5305-5-ND
DigiKey RF MOSFET LDMOS 28V POWERSO10 Min Qty: 1 Lead time: 23 Weeks Container: Tube 357
In Stock
  • 1 $27.1500
  • 10 $21.9910
  • 50 $19.9248
  • 100 $19.6625
$19.6625 / $27.1500 Buy Now
DISTI # PD57018-E
Avnet Americas Transistor RF FET N-CH 65V 2.5A 945MHz 3-Pin PowerSO-10RF Tube - Bag (Alt: PD57018-E) COO: Malaysia RoHS: Compliant Min Qty: 400 Package Multiple: 400 Lead time: 23 Weeks, 0 Days Container: Bag 0
  • 400 $22.4714
  • 800 $21.2568
  • 1,600 $20.6974
  • 3,200 $20.1667
  • 6,400 $19.8360
$19.8360 / $22.4714 Buy Now
DISTI # 511-PD57018-E
Mouser Electronics RF MOSFET Transistors POWER RF Transistor RoHS: Compliant 296
  • 1 $31.9400
  • 10 $23.4500
  • 100 $21.9000
$21.9000 / $31.9400 Buy Now
STMicroelectronics RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs COO: Malaysia RoHS: Compliant Min Qty: 1 296
  • 1 $31.3000
  • 10 $22.9800
  • 100 $21.4600
  • 400 $21.4500
$21.4500 / $31.3000 Buy Now
Future Electronics PD57018-E Series 1 GHz 18 W 65 V N-Channel RF Power Transistor - POWERSO-10RF RoHS: Compliant pbFree: Yes Min Qty: 400 Package Multiple: 400 Lead time: 23 Weeks Container: Tube 0
Tube
  • 400 $19.6700
$19.6700 Buy Now
DISTI # 90300857
Verical Trans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube RoHS: Exempt Min Qty: 1 Package Multiple: 1 Date Code: 2512 Americas - 2624
  • 1 $24.4739
  • 10 $19.6721
$19.6721 / $24.4739 Buy Now
DISTI # 90184532
Verical Trans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube RoHS: Exempt Min Qty: 36 Package Multiple: 36 Date Code: 2511 Americas - 36
  • 36 $19.6200
$19.6200 Buy Now
DISTI # PD57018-E
TME Transistor: N-MOSFET, unipolar, RF, 65V, 2.5A, 31.7W, PowerSO10RF Min Qty: 1 0
  • 1 $31.0000
  • 10 $23.3300
$23.3300 / $31.0000 RFQ
DISTI # PD57018-E
IBS Electronics TRANSISTOR MOSFET N-CH 65V 2.5A 4-PIN (2&#x2B, 2TAB) POWERSO-10RF (FORMED LEAD) TUBE Min Qty: 1 Package Multiple: 1 0
  • 1 $26.8100
$26.8100 Buy Now
DISTI # PD57018-E
Avnet Silica Transistor RF FET NCH 65V 25A 945MHz 3Pin PowerSO10RF Tube (Alt: PD57018-E) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 24 Weeks, 0 Days Silica - 800
Buy Now
Chip Stock TransistorMOSFETN-CH65V2.5A4-Pin(2+2Tab)PowerSO-10RF(Formedlead)Tube 1019
RFQ
DISTI # PD57018-E
EBV Elektronik Transistor RF FET NCH 65V 25A 945MHz 3Pin PowerSO10RF Tube (Alt: PD57018-E) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 24 Weeks, 0 Days EBV - 200
Buy Now
Win Source Electronics FET RF 65V 945MHZ PWRSO10 894
  • 2 $37.7573
  • 4 $30.9805
  • 6 $30.0122
  • 8 $29.0441
  • 11 $28.0760
  • 14 $25.1716
$25.1716 / $37.7573 Buy Now

Part Details for PD57018-E

PD57018-E Part Data Attributes

Parametric Data
PD57018-E STMicroelectronics
Buy Now Datasheet
Compare Parts:
PD57018-E STMicroelectronics RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Part Package Code SOT
Package Description Rohs Compliant, Plastic, Powerso-10rf, 2 Pin
Pin Count 10
Reach Compliance Code Not Compliant
ECCN Code EAR99
Factory Lead Time 23 Weeks
Additional Feature High Reliability
Case Connection Source
Configuration Single
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 2.5 A
FET Technology Metal-Oxide Semiconductor
Highest Frequency Band Ultra High Frequency Band
JESD-30 Code R-PDSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 2
Operating Mode Enhancement Mode
Operating Temperature-Max 165 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Small Outline
Peak Reflow Temperature (Cel) 250
Polarity/Channel Type N-Channel
Power Dissipation-Max (Abs) 31.7 W
Qualification Status Not Qualified
Surface Mount Yes
Terminal Finish Matte Tin (Sn) - Annealed
Terminal Form Gull Wing
Terminal Position Dual
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application Amplifier
Transistor Element Material Silicon

Alternate Parts for PD57018-E

This table gives cross-reference parts and alternative options found for PD57018-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PD57018-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
934056838112 NXP Semiconductors Check for Price RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET PD57018-E vs 934056838112
PD57018 STMicroelectronics Check for Price RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET PD57018-E vs PD57018
equivalents icon

PD57018-E Related Parts

PD57018-E Frequently Asked Questions (FAQ)

  • The recommended operating temperature range for PD57018-E is -40°C to 125°C.

  • To ensure reliable communication, use a proper PCB layout, ensure signal integrity, and follow the recommended pin configuration and signal routing guidelines.

  • The PD57018-E supports data transfer rates up to 100 Mbps.

  • Yes, the PD57018-E is designed to withstand high-vibration environments, but ensure proper mounting and mechanical stress relief to prevent damage.

  • Use proper shielding, grounding, and filtering techniques to minimize EMI effects. Follow STMicroelectronics' guidelines for EMI mitigation.

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