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Overview of RFD12N06RLESM9A_NL by Fairchild Semiconductor Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for RFD12N06RLESM9A_NL by Fairchild Semiconductor Corporation
Part Data Attributes for RFD12N06RLESM9A_NL by Fairchild Semiconductor Corporation
|
|
---|---|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
FAIRCHILD SEMICONDUCTOR CORP
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Part Package Code
|
TO-252AA
|
Package Description
|
SMALL OUTLINE, R-PSSO-G2
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Pin Count
|
4
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
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Case Connection
|
DRAIN
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Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
60 V
|
Drain Current-Max (ID)
|
18 A
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Drain-source On Resistance-Max
|
0.075 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
|
TO-252AA
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JESD-30 Code
|
R-PSSO-G2
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JESD-609 Code
|
e3
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Number of Elements
|
1
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Number of Terminals
|
2
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Operating Mode
|
ENHANCEMENT MODE
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
|
RECTANGULAR
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Package Style
|
SMALL OUTLINE
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Polarity/Channel Type
|
N-CHANNEL
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Qualification Status
|
Not Qualified
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Surface Mount
|
YES
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Terminal Finish
|
MATTE TIN
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Terminal Form
|
GULL WING
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Terminal Position
|
SINGLE
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for RFD12N06RLESM9A_NL
This table gives cross-reference parts and alternative options found for RFD12N06RLESM9A_NL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD12N06RLESM9A_NL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FQD20N06LETF | Power Field-Effect Transistor, 17.2A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | RFD12N06RLESM9A_NL vs FQD20N06LETF |
IRL5NJ024SCX | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD0.5, 3 PIN | Infineon Technologies AG | RFD12N06RLESM9A_NL vs IRL5NJ024SCX |
IRFZ24NPBF | 17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | NXP Semiconductors | RFD12N06RLESM9A_NL vs IRFZ24NPBF |
IRL5NJ024PBF | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD0.5, 3 PIN | Infineon Technologies AG | RFD12N06RLESM9A_NL vs IRL5NJ024PBF |
IRL5NJ024 | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD0.5, 3 PIN | Infineon Technologies AG | RFD12N06RLESM9A_NL vs IRL5NJ024 |
NTDV18N06LT4G | Single N-Channel Logic Level Power MOSFET 60V, 18A, 65mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL, Automotive Qualified | onsemi | RFD12N06RLESM9A_NL vs NTDV18N06LT4G |
IPD640N06LGBTMA1 | Power Field-Effect Transistor, 18A I(D), 60V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | RFD12N06RLESM9A_NL vs IPD640N06LGBTMA1 |
IRFZ24NHR | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | RFD12N06RLESM9A_NL vs IRFZ24NHR |
IRLZ24NS | Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 | Infineon Technologies AG | RFD12N06RLESM9A_NL vs IRLZ24NS |
FQD20N06L | Power Field-Effect Transistor, 17.2A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | RFD12N06RLESM9A_NL vs FQD20N06L |