Datasheets
RFL1N10 by:

1000mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF

Part Details for RFL1N10 by Rochester Electronics LLC

Overview of RFL1N10 by Rochester Electronics LLC

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Part Details for RFL1N10

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RFL1N10 Part Data Attributes

RFL1N10 Rochester Electronics LLC
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RFL1N10 Rochester Electronics LLC 1000mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF
Pbfree Code No
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 1 A
Drain-source On Resistance-Max 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 25 pF
JEDEC-95 Code TO-205AF
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RFL1N10

This table gives cross-reference parts and alternative options found for RFL1N10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFL1N10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BS107ARLRM 250mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 Motorola Mobility LLC RFL1N10 vs BS107ARLRM
BSS123-T TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal NXP Semiconductors RFL1N10 vs BSS123-T
FDN361BN 1400mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN Rochester Electronics LLC RFL1N10 vs FDN361BN
BS107RL1 250mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 Motorola Mobility LLC RFL1N10 vs BS107RL1
BS107 130mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 Rochester Electronics LLC RFL1N10 vs BS107
2SK1069(FJ)TL Small Signal Field-Effect Transistor SANYO Electric Co Ltd RFL1N10 vs 2SK1069(FJ)TL
2N5639 N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-92, 3 PIN Rochester Electronics LLC RFL1N10 vs 2N5639
2SK1839-TL Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET SANYO Electric Co Ltd RFL1N10 vs 2SK1839-TL
MPF930RLRE 2000mA, 35V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 Motorola Mobility LLC RFL1N10 vs MPF930RLRE
2N7002LT1 115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, CASE 318-08, 3 PIN Motorola Mobility LLC RFL1N10 vs 2N7002LT1

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