Part Details for SCX18T512160AF-25E by Xi'an UniIC Semiconductors Co Ltd
Overview of SCX18T512160AF-25E by Xi'an UniIC Semiconductors Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| SIT8924BA-31-25E-1.000000 | SiTime | SIT8924BA-31-25E-1.000000 | |
| SIT8004AC-23-25E-150.00000 | SiTime | SIT8004AC-23-25E-150.00000 | |
| SiT8256AC-83-25E-156.250000 | SiTime | SiT8256AC-83-25E-156.250000 |
Part Details for SCX18T512160AF-25E
SCX18T512160AF-25E CAD Models
SCX18T512160AF-25E Part Data Attributes
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SCX18T512160AF-25E
Xi'an UniIC Semiconductors Co Ltd
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Datasheet
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SCX18T512160AF-25E
Xi'an UniIC Semiconductors Co Ltd
DDR DRAM,
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| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | XIAN UNILC SEMICONDUCTORS CO LTD | |
| Package Description | TFBGA, | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Mode | MULTI BANK PAGE BURST | |
| Access Time-Max | 0.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-PBGA-B84 | |
| Length | 12.5 mm | |
| Memory Density | 536870912 bit | |
| Memory IC Type | DDR DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 84 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 95 °C | |
| Operating Temperature-Min | ||
| Organization | 32MX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 8 mm |
Alternate Parts for SCX18T512160AF-25E
This table gives cross-reference parts and alternative options found for SCX18T512160AF-25E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SCX18T512160AF-25E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT47H32M16HR-25E:H | DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | Micron Technology Inc | SCX18T512160AF-25E vs MT47H32M16HR-25E:H |
| K4T51163QQ-BIF70 | DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, FBGA-84 | Samsung Semiconductor | SCX18T512160AF-25E vs K4T51163QQ-BIF70 |
| IS43DR16320E-25DBL | DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, BGA-84 | Integrated Silicon Solution Inc | SCX18T512160AF-25E vs IS43DR16320E-25DBL |
| NT5TU32M16EG-ACH | DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, VFBGA-84 | Nanya Technology Corporation | SCX18T512160AF-25E vs NT5TU32M16EG-ACH |
| K4T51163QQ-BIE70 | DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, FBGA-84 | Samsung Semiconductor | SCX18T512160AF-25E vs K4T51163QQ-BIE70 |
| IS43DR16320E-25DBLI-TR | DDR DRAM, | Integrated Silicon Solution Inc | SCX18T512160AF-25E vs IS43DR16320E-25DBLI-TR |
| IS46DR16320E-25DBLA2-TR | DDR DRAM, | Integrated Silicon Solution Inc | SCX18T512160AF-25E vs IS46DR16320E-25DBLA2-TR |
| IS46DR16320E-25DBLA1-TR | DDR DRAM, | Integrated Silicon Solution Inc | SCX18T512160AF-25E vs IS46DR16320E-25DBLA1-TR |
| K4T51163QQ-BPE70 | DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, FBGA-84 | Samsung Semiconductor | SCX18T512160AF-25E vs K4T51163QQ-BPE70 |
| EM68B16CWPA-25H | DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 10 X 12.50 MM, 1.20 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 | Etron Technology Inc | SCX18T512160AF-25E vs EM68B16CWPA-25H |