Datasheets
SD1019E3 by: Microsemi Corporation

RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, M130, 4 PIN

Part Details for SD1019E3 by Microsemi Corporation

Overview of SD1019E3 by Microsemi Corporation

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Applications Consumer Electronics Audio and Video Systems

Part Details for SD1019E3

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SD1019E3 Part Data Attributes:

SD1019E3 Microsemi Corporation
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SD1019E3 Microsemi Corporation RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, M130, 4 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer MICROSEMI CORP
Package Description DISK BUTTON, O-CRDB-F4
Reach Compliance Code compliant
ECCN Code EAR99
Collector Current-Max (IC) 9 A
Collector-Base Capacitance-Max 150 pF
Collector-Emitter Voltage-Max 35 V
Configuration SINGLE
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code O-CRDB-F4
Number of Elements 1
Number of Terminals 4
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style DISK BUTTON
Polarity/Channel Type NPN
Surface Mount YES
Terminal Form FLAT
Terminal Position RADIAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 150 MHz

Alternate Parts for SD1019E3

This table gives cross-reference parts and alternative options found for SD1019E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SD1019E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SD1019 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, M130, 4 PIN Microsemi Corporation SD1019E3 vs SD1019
Part Number Description Manufacturer Compare
BLV21 TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, SOT-123A, 4 PIN, BIP RF Power NXP Semiconductors SD1019E3 vs BLV21
MS1003 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M111, FM-6 Microsemi Corporation SD1019E3 vs MS1003
BLV11 TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, SOT-123A, 4 PIN, BIP RF Power NXP Semiconductors SD1019E3 vs BLV11
MRF226 VHF BAND, Si, NPN, RF POWER TRANSISTOR, CASE 145A-01, 4 PIN Motorola Mobility LLC SD1019E3 vs MRF226
TP9386 VHF BAND, Si, NPN, RF POWER TRANSISTOR Motorola Mobility LLC SD1019E3 vs TP9386
MRF240 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN Motorola Semiconductor Products SD1019E3 vs MRF240
2SC2694 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, CERAMIC, T-40, 5 PIN Mitsubishi Electric SD1019E3 vs 2SC2694
MRF314 RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4 Advanced Semiconductor Inc SD1019E3 vs MRF314
MRF654 RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, Advanced Semiconductor Inc SD1019E3 vs MRF654
VHB25-28F RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4 Advanced Semiconductor Inc SD1019E3 vs VHB25-28F

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