Part Details for SD219DE by Calogic Inc
Results Overview of SD219DE by Calogic Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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SD219DE Information
SD219DE by Calogic Inc is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SD219DE
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET | 20 |
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$5.2350 / $10.4700 | Buy Now |
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NAC | 160mA, 25V, N-CHANNEL, Si, SMALLSIGNAL,MOSFET,TO-72 RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 | 0 |
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$8.2200 / $9.1100 | Buy Now |
US Tariff Estimator: SD219DE by Calogic Inc
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
SD219DE Part Data Attributes
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SD219DE
Calogic Inc
Buy Now
Datasheet
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Compare Parts:
SD219DE
Calogic Inc
Small Signal Field-Effect Transistor, 0.16A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72
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| Part Life Cycle Code | Active | |
| Part Package Code | TO-72 | |
| Package Description | Hermetic Sealed Package-4 | |
| Pin Count | 4 | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Additional Feature | Logic Level Compatible | |
| Case Connection | Substrate | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 0.16 A | |
| Drain-source On Resistance-Max | 5 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 5 Pf | |
| JEDEC-95 Code | TO-72 | |
| JESD-30 Code | O-MBCY-W4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 125 °C | |
| Package Body Material | Metal | |
| Package Shape | Round | |
| Package Style | Cylindrical | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation Ambient-Max | 1.2 W | |
| Power Dissipation-Max (Abs) | 0.3 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Form | Wire | |
| Terminal Position | Bottom | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |