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Transistors / Small Signal Field-Effect Transistors / SI2308CDS-T1-GE3
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SI2308CDS-T1-GE3 by:

Small Signal Field-Effect Transistor,

Part Details for SI2308CDS-T1-GE3 by Vishay Intertechnologies

Overview of SI2308CDS-T1-GE3 by Vishay Intertechnologies

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Price & Stock for SI2308CDS-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 78AC6535
Newark Mosfet, N-Ch, 60V, 2.6A, 150Deg C, 1.6W, Transistor Polarity:N Channel, Continuous Drain Current Id:2.6A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.12Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Rohs Compliant: Yes |Vishay SI2308CDS-T1-GE3 Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 1 $0.4050
  • 25 $0.3240
  • 50 $0.2650
  • 100 $0.2050
$0.2050 / $0.4050 Buy Now
DISTI # 59AC7474
Newark N-Channel 60-V (D-S) Mosfet |Vishay SI2308CDS-T1-GE3 Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 5,000 $0.1260
  • 10,000 $0.1100
  • 20,000 $0.0980
  • 30,000 $0.0910
  • 50,000 $0.0820
$0.0820 / $0.1260 Buy Now
DISTI # 26AK9915
Newark N-Channel 60-V (D-S) Mosfet |Vishay SI2308CDS-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 1 $0.3740
  • 25 $0.3120
  • 50 $0.2630
  • 100 $0.2130
$0.2130 / $0.3740 Buy Now
DISTI # SI2308CDS-T1-GE3
Avnet Americas TrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 2.1A ID 3-Pin SOT-23 - Tape and Reel (Alt: SI2308CDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 38 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.1152
$0.1152 Buy Now
DISTI # 78-SI2308CDS-T1-GE3
Mouser Electronics MOSFET 60V Vds 20V Vgs SOT-23 RoHS: Compliant 218449
  • 1 $0.3800
  • 10 $0.3010
  • 100 $0.1930
  • 1,000 $0.1160
  • 3,000 $0.1150
  • 9,000 $0.1030
  • 24,000 $0.1020
  • 45,000 $0.0960
$0.0960 / $0.3800 Buy Now
Future Electronics Si2308CDS Series 60 V 2.6 A 105 pF SMT N-Channel Mosfet - SOT-23 (TO-236) RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Cut Tape/Mini-Reel 30
Cut Tape/Mini-Reel
  • 1 $0.1250
  • 15 $0.1090
  • 75 $0.1010
  • 300 $0.0937
  • 1,500 $0.0834
$0.0834 / $0.1250 Buy Now
Future Electronics Si2308CDS Series 60 V 2.6 A 105 pF SMT N-Channel Mosfet - SOT-23 (TO-236) RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.0937
  • 9,000 $0.0900
  • 12,000 $0.0891
  • 30,000 $0.0862
  • 45,000 $0.0834
$0.0834 / $0.0937 Buy Now
Future Electronics Si2308CDS Series 60 V 2.6 A 105 pF SMT N-Channel Mosfet - SOT-23 (TO-236) RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.0937
  • 9,000 $0.0900
  • 12,000 $0.0891
  • 30,000 $0.0862
  • 45,000 $0.0834
$0.0834 / $0.0937 Buy Now
Bristol Electronics   10448
RFQ
Quest Components   76
  • 1 $0.6000
  • 9 $0.3000
  • 34 $0.1800
$0.1800 / $0.6000 Buy Now
DISTI # SI2308CDS-T1-GE3
TTI MOSFET 60V Vds 20V Vgs SOT-23 RoHS: Compliant pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel Americas - 0
  • 6,000 $0.1150
$0.1150 Buy Now
DISTI # SI2308CDS-T1-GE3
Avnet Americas TrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 2.1A ID 3-Pin SOT-23 - Tape and Reel (Alt: SI2308CDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 38 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.1152
$0.1152 Buy Now
DISTI # SI2308CDS-T1-GE3
TME Transistor: N-MOSFET, unipolar, 60V, 2.6A, Idm: 6A, 1W, SOT23 Min Qty: 1 0
  • 1 $0.2580
  • 10 $0.1800
  • 25 $0.1620
  • 100 $0.1440
  • 250 $0.1290
  • 500 $0.1200
  • 1,000 $0.1160
  • 3,000 $0.1120
$0.1120 / $0.2580 RFQ
DISTI # SI2308CDS-T1-GE3
Avnet Americas TrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 2.1A ID 3-Pin SOT-23 - Tape and Reel (Alt: SI2308CDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 38 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.1152
$0.1152 Buy Now
DISTI # SMC-SI2308CDS-T1-GE3
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 10448
RFQ
DISTI # SI2308CDS-T1-GE3
Avnet Asia TrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 2.1A ID 3-Pin SOT-23 (Alt: SI2308CDS-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 46 Weeks, 0 Days 0
  • 6,000 $0.1373
  • 12,000 $0.1354
  • 18,000 $0.1336
  • 30,000 $0.1318
  • 60,000 $0.1283
  • 150,000 $0.1250
  • 300,000 $0.1219
$0.1219 / $0.1373 Buy Now
CHIPMALL.COM LIMITED Package/EnclosureSOT-23-3 fet typeN-Channel Operating temperature-55C~150C Gate voltage Vgs20V Drain-source voltage Vds60V 3012
  • 3,000 $0.1154
$0.1154 Buy Now
Chips Pulse Industry Limited SOT-23-3 MOSFETs RoHS Purchase Online, Ship Immediately 2802
  • 150 $0.1850
  • 500 $0.1564
  • 3,000 $0.1436
  • 6,000 $0.1360
$0.1360 / $0.1850 Buy Now
DISTI # SI2308CDS-T1-GE3
EBV Elektronik TrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS �20V VGS 2.1A ID 3-Pin SOT-23 (Alt: SI2308CDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 5 Weeks, 4 Days EBV - 0
Buy Now
DISTI # 2932884RL
element14 Asia-Pacific MOSFET, N-CH, 60V, 2.6A, 150DEG C, 1.6W RoHS: Compliant Min Qty: 100 Container: Reel 0
  • 100 $0.1688
  • 500 $0.1350
  • 1,000 $0.1005
  • 5,000 $0.0903
$0.0903 / $0.1688 Buy Now
DISTI # 2932884
element14 Asia-Pacific MOSFET, N-CH, 60V, 2.6A, 150DEG C, 1.6W RoHS: Compliant Min Qty: 5 Container: Cut Tape 0
  • 5 $0.3882
  • 10 $0.3031
  • 100 $0.1688
  • 500 $0.1350
  • 1,000 $0.1005
  • 5,000 $0.0903
$0.0903 / $0.3882 Buy Now
DISTI # 2932884
Farnell MOSFET, N-CH, 60V, 2.6A, 150DEG C, 1.6W RoHS: Compliant Min Qty: 5 Lead time: 41 Weeks, 1 Days Container: Cut Tape 0
  • 5 $0.4170
  • 10 $0.3412
  • 100 $0.2073
  • 500 $0.1592
  • 1,000 $0.1112
  • 5,000 $0.1011
$0.1011 / $0.4170 Buy Now
DISTI # 2932884RL
Farnell MOSFET, N-CH, 60V, 2.6A, 150DEG C, 1.6W RoHS: Compliant Min Qty: 100 Lead time: 41 Weeks, 1 Days Container: Reel 0
  • 100 $0.2073
  • 500 $0.1592
  • 1,000 $0.1112
  • 5,000 $0.1011
$0.1011 / $0.2073 Buy Now
LCSC 60V 2.6A 144m1.9A10V 1.6W 3V250uA 1PCSNChannel SOT-23-3 MOSFETs ROHS 2335
  • 5 $0.2907
  • 50 $0.2311
  • 150 $0.2056
  • 500 $0.1738
  • 3,000 $0.1596
  • 6,000 $0.1511
$0.1511 / $0.2907 Buy Now

Part Details for SI2308CDS-T1-GE3

SI2308CDS-T1-GE3 CAD Models

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SI2308CDS-T1-GE3 Part Data Attributes

Parametric Data
SI2308CDS-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI2308CDS-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 38 Weeks
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 2.6 A
Drain-source On Resistance-Max 0.144 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI2308CDS-T1-GE3

This table gives cross-reference parts and alternative options found for SI2308CDS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2308CDS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI2308BDS-T1-E3 TRANSISTOR 1900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT, SSOT-23, 3 PIN, FET General Purpose Small Signal Vishay Siliconix SI2308CDS-T1-GE3 vs SI2308BDS-T1-E3
SI2308BDS-T1-E3 Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, Vishay Intertechnologies SI2308CDS-T1-GE3 vs SI2308BDS-T1-E3
Part Number Description Manufacturer Compare
IRFL014N Small Signal Field-Effect Transistor, 1.9A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG SI2308CDS-T1-GE3 vs IRFL014N
SI2308BDS-T1-E3 TRANSISTOR 1900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT, SSOT-23, 3 PIN, FET General Purpose Small Signal Vishay Siliconix SI2308CDS-T1-GE3 vs SI2308BDS-T1-E3
IRFL014NPBF Small Signal Field-Effect Transistor, 1.9A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 Infineon Technologies AG SI2308CDS-T1-GE3 vs IRFL014NPBF
SI2308BDS-T1-E3 Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, Vishay Intertechnologies SI2308CDS-T1-GE3 vs SI2308BDS-T1-E3

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