Part Details for SI2309DS-T1-E3 by Vishay Siliconix
Results Overview of SI2309DS-T1-E3 by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
SI2309DS-T1-E3 Information
SI2309DS-T1-E3 by Vishay Siliconix is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
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|---|---|---|---|
| IXF1002EDT-G | Rochester Electronics LLC | IXF1002 - Dual Port Gigabit Ethernet Controller | |
| AM79C961AVI | Rochester Electronics LLC | Full Duplex 10/100 MBPS ETHERNET Controller for PCI Local Bus, PCNET- ISA II jumperless | |
| IXF1002ED | Rochester Electronics LLC | IXF1002ED - Dual Port Gigabit Ethernet Controller |
Price & Stock for SI2309DS-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
70026067
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RS | MOSFET, POWER, P-CH, VDSS -60V, RDS(ON) 0.275OHM, ID -1.25A, TO-236 (SOT-23),PD 1.25W Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
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$0.5100 / $0.6200 | RFQ |
|
|
Vyrian | Transistors | 6925 |
|
RFQ |
Part Details for SI2309DS-T1-E3
SI2309DS-T1-E3 CAD Models
SI2309DS-T1-E3 Part Data Attributes
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SI2309DS-T1-E3
Vishay Siliconix
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Datasheet
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SI2309DS-T1-E3
Vishay Siliconix
Small Signal Field-Effect Transistor, 0.00125A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | SOT-23 | |
| Package Description | Rohs Compliant Package-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.00125 A | |
| Drain-source On Resistance-Max | 0.34 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Polarity/Channel Type | P-Channel | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Transistor Element Material | Silicon |
SI2309DS-T1-E3 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the SI2309DS-T1-E3 is -40°C to 125°C.
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To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 10uF and a maximum ESR of 1 ohm.
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The recommended input capacitor value for the SI2309DS-T1-E3 is 1uF to 10uF, with an X5R or X7R dielectric.
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Yes, the SI2309DS-T1-E3 is suitable for high-reliability applications, as it is built with a robust design and has undergone rigorous testing and qualification.
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The power dissipation of the SI2309DS-T1-E3 can be calculated using the formula: Pd = (Vin - Vout) x Iout, where Vin is the input voltage, Vout is the output voltage, and Iout is the output current.