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Transistors / Small Signal Field-Effect Transistors / SI2338DS-T1-GE3
Datasheets
SI2338DS-T1-GE3 by:

Small Signal Field-Effect Transistor, 6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN

Part Details for SI2338DS-T1-GE3 by Vishay Intertechnologies

Overview of SI2338DS-T1-GE3 by Vishay Intertechnologies

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

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Price & Stock for SI2338DS-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 05AC9480
Newark Mosfet, N-Ch, 30V, 6A, Sot-23, Transistor Polarity:N Channel, Continuous Drain Current Id:6A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.023Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.5V, Power Dissipation Rohs Compliant: Yes |Vishay SI2338DS-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel 36000
  • 3,000 $0.2020
  • 6,000 $0.1940
  • 12,000 $0.1870
  • 18,000 $0.1840
  • 30,000 $0.1830
$0.1830 / $0.2020 Buy Now
DISTI # 01AC4979
Newark Mosfet, N-Ch, 30V, 6A, 150Deg C, 2.5W, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Vishay SI2338DS-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 3482
  • 1 $0.0650
  • 25 $0.0650
  • 100 $0.0650
  • 500 $0.0650
  • 1,000 $0.0650
  • 2,500 $0.0650
  • 10,000 $0.0650
  • 25,000 $0.0650
$0.0650 Buy Now
DISTI # 26AK9916
Newark N-Channel 30-V (D-S) Mosfet |Vishay SI2338DS-T1-GE3 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 3000
  • 1 $0.1360
  • 25 $0.1360
  • 100 $0.1360
  • 500 $0.1360
  • 1,000 $0.1360
  • 2,500 $0.1360
  • 10,000 $0.1360
  • 25,000 $0.1360
$0.1360 Buy Now
DISTI # SI2338DS-T1-GE3
Avnet Americas N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI2338DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel 6000
  • 3,000 $0.1412
$0.1412 Buy Now
DISTI # 01AC4979
Avnet Americas N-CHANNEL 30-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 01AC4979) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks, 1 Days Container: Ammo Pack 3482 Partner Stock
  • 1 $0.6660
  • 25 $0.5330
  • 100 $0.3200
  • 500 $0.2530
  • 1,000 $0.1860
$0.1860 / $0.6660 Buy Now
DISTI # 26AK9916
Avnet Americas N-CHANNEL 30-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 26AK9916) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 3 Days Container: Ammo Pack 3000 Partner Stock
  • 1 $0.5750
  • 25 $0.4600
  • 100 $0.2760
  • 500 $0.2190
  • 1,000 $0.1600
$0.1600 / $0.5750 Buy Now
DISTI # 78-SI2338DS-T1-GE3
Mouser Electronics MOSFETs 30V Vds 20V Vgs SOT-23 RoHS: Compliant 11593
  • 1 $0.5100
  • 10 $0.4330
  • 100 $0.3020
  • 500 $0.2360
  • 1,000 $0.1920
  • 3,000 $0.1620
  • 9,000 $0.1550
  • 24,000 $0.1470
$0.1470 / $0.5100 Buy Now
Future Electronics N-Channel 30 V 28 mOhm 13 nC Surface Mount Power Mosfet - SOT-23-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.1540
  • 6,000 $0.1510
  • 9,000 $0.1490
  • 12,000 $0.1480
  • 15,000 $0.1440
$0.1440 / $0.1540 Buy Now
Future Electronics N-Channel 30 V 28 mOhm 13 nC Surface Mount Power Mosfet - SOT-23-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks Container: Reel 0
Reel
  • 3,000 $0.1540
  • 6,000 $0.1510
  • 9,000 $0.1490
  • 12,000 $0.1480
  • 15,000 $0.1440
$0.1440 / $0.1540 Buy Now
DISTI # SI2338DS-T1-GE3
TTI MOSFETs 30V Vds 20V Vgs SOT-23 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 9000
In Stock
  • 3,000 $0.1560
  • 24,000 $0.1470
  • 30,000 $0.1440
$0.1440 / $0.1560 Buy Now
DISTI # SI2338DS-T1-GE3
TME Transistor: N-MOSFET, unipolar, 30V, 6A, Idm: 25A, 1.6W, SOT23 Min Qty: 1 2960
  • 1 $0.4990
  • 50 $0.3610
  • 100 $0.3080
  • 250 $0.2470
  • 500 $0.2130
  • 1,000 $0.1900
  • 1,500 $0.1800
  • 3,000 $0.1790
$0.1790 / $0.4990 Buy Now
DISTI # SI2338DS-T1-GE3
Avnet Asia N-CHANNEL 30-V (D-S) MOSFET (Alt: SI2338DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days 0
RFQ
DISTI # C1S804000762728
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes 6000
  • 3,000 $0.1570
$0.1570 Buy Now
DISTI # C1S803603944900
Chip1Stop Trans MOSFET N-CH 30V 5.5A 3-Pin SOT-23 T/R RoHS: Compliant pbFree: Yes 3000
  • 3,000 $0.1940
$0.1940 Buy Now
DISTI # SI2338DS-T1-GE3
EBV Elektronik Trans MOSFET N-CH 30V 6A 3-Pin SOT-23 T/R (Alt: SI2338DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now
LCSC 30V 6A 28m10V5.5A 2.5V250uA 1 N-Channel SOT-23 MOSFETs ROHS 2241
  • 1 $0.3644
  • 10 $0.2890
  • 30 $0.2576
  • 100 $0.2183
  • 500 $0.1995
  • 1,000 $0.1901
$0.1901 / $0.3644 Buy Now

Part Details for SI2338DS-T1-GE3

SI2338DS-T1-GE3 CAD Models

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SI2338DS-T1-GE3 Part Data Attributes

Parametric Data
SI2338DS-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI2338DS-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description TO-236, SOT-23, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks, 3 Days
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 42 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI2338DS-T1-GE3

This table gives cross-reference parts and alternative options found for SI2338DS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2338DS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
DMN3404L-7 Power Field-Effect Transistor, 5.8A I(D), 30V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Diodes Incorporated SI2338DS-T1-GE3 vs DMN3404L-7
SI2338DS-T1-GE3 TRANSISTOR 6 A, 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power Vishay Siliconix SI2338DS-T1-GE3 vs SI2338DS-T1-GE3

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